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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GP10M-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10M | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 30A | 1kV | 3 μs | 3 μs | Standard | 1kV | 1A | 1A | 7pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| FFSB0865B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-ffsb0865b-datasheets-1074.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 336pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 8A | 10.1A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDDD10G65C6XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-iddd10g65c6xtma1-datasheets-1083.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 495pF @ 1V 1MHz | 650V | 33μA @ 420V | 29A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30100SG-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-v30100sge34w-datasheets-0975.pdf | TO-220-3 | Lead Free | 3 | 10 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | Standard | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | R-PSFM-T3 | 30A | 30A | 970mV | 250A | 350μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350μA | 100V | 250A | TO-220AB | Schottky | 100V | 30A | 1 | 350μA @ 100V | 1V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| FFSB0665B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-ffsb0665b-datasheets-1088.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 259pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 6A | 8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH5L06D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth5l06rl-datasheets-7391.pdf | 600V | 5A | TO-220-2 | 10.4mm | 9.3mm | 4.6mm | Lead Free | 2 | 11 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STTH5L06 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 5A | 5A | 1.3V | 90A | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90A | 5μA | 600V | 90A | 600V | 95 ns | 95 ns | Standard | 600V | 5A | 1 | 5μA @ 600V | 1.3V @ 5A | 175°C Max | ||||||||||||||||||||||||||||
| GP10T-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10T | 2 | Single | 1 | Rectifier Diodes | 1A | 1.3V | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.3kV | 25A | 1.3kV | 3 μs | 3 μs | Standard | 1.3kV | 1A | 1A | 5pF @ 4V 1MHz | 1300V | 5μA @ 1300V | 1.3V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| TSD3GHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 45pF @ 4V 1MHz | 400V | 1μA @ 400V | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ10FN-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs30wq10fnm3-datasheets-0900.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 3.5A | 960mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440A | 1mA | 100V | 440A | Schottky | 100V | 3.5A | 1 | 92pF @ 5V 1MHz | 1mA @ 100V | 810mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| TSUP15M60SH S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsup15m60shs1g-datasheets-0904.pdf | TO-277, 3-PowerDFN | 16 Weeks | SMPC4.6U | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1046pF @ 4V 1MHz | 60V | 450μA @ 60V | 640mV @ 15A | 15A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDDD04G65C6XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-iddd04g65c6xtma1-datasheets-0906.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 205pF @ 1V 1MHz | 650V | 14μA @ 420V | 13A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBRD8835LG-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-mbrd835lt4g-datasheets-1505.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | MBRD835 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 1.4mA @ 35V | 510mV @ 8A | 8A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSUP5M45SH S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsup5m45shs1g-datasheets-0862.pdf | TO-277, 3-PowerDFN | 16 Weeks | SMPC4.6U | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 589pF @ 4V 1MHz | 45V | 150μA @ 45V | 600mV @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HERF1007GAHC0G | Taiwan Semiconductor Corporation | $1.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-herf1007gac0g-datasheets-4537.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | COMMON ANODE, 2 ELEMENTS | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 10μA | TO-220AB | 80ns | Standard | 125A | 1 | 5A | 40pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.7V @ 5A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| STPS1045B | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stps1045b-datasheets-0941.pdf | 45V | 10A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | Standard | SINGLE | GULL WING | 260 | STPS1045 | 3 | Common Anode | 30 | 1 | Rectifier Diodes | 10A | 10A | 840mV | 75A | 100μA | CATHODE | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 100μA | 45V | 75A | Schottky | 45V | 10A | 1 | 100μA @ 45V | 630mV @ 10A | 175°C Max | ||||||||||||||||||||||||||||
| HERF1008GAHC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-herf1007gac0g-datasheets-4537.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 40pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.7V @ 5A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FERD20S100STS | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-ferd20s100sts-datasheets-0954.pdf | TO-220-3 | 3 | 15 Weeks | ACTIVE (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | FERD20 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T3 | 20A | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 110μA | TO-220AB | FERD (Field Effect Rectifier Diode) | 1 | 100V | 100μA @ 100V | 780mV @ 10A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMEG050T150EPDZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/nexperiausainc-pmeg050t150epdz-datasheets-0673.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | DUAL | FLAT | 3 | Common Anode | 1 | 15A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.66W | 50V | 210A | 100μA | 60 ns | Schottky | 50V | 15A | 1 | 800pF @ 10V 1MHz | 100μA @ 50V | 550mV @ 15A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| TSUP10M45SH S1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsup10m45shs1g-datasheets-0822.pdf | TO-277, 3-PowerDFN | 16 Weeks | SMPC4.6U | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1099pF @ 4V 1MHz | 45V | 200μA @ 45V | 600mV @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSQ1PG-M3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-msq1pgm3h-datasheets-0776.pdf | DO-219AD | 10 Weeks | MicroSMP (DO-219AD) | 1A | Standard Recovery >500ns, > 200mA (Io) | 650ns | Standard | 4pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.2V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETH03-1-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15eth031m3-datasheets-0969.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | TO-262AA | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | Standard | 300V | 40μA @ 300V | 1.25V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSD3G | Taiwan Semiconductor Corporation | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 6 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | Standard | 45pF @ 4V 1MHz | 400V | 1μA @ 400V | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UCU20D30 | Kyocera International Inc. Electronic Components | $2.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263LP | Fast Recovery =< 500ns, > 200mA (Io) | 33ns | Standard | 300V | 25μA @ 300V | 1.3V @ 10A | 20A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSQ1PJHM3/H | Vishay Semiconductor Diodes Division | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-msq1pgm3h-datasheets-0776.pdf | DO-219AD | 10 Weeks | MicroSMP (DO-219AD) | Standard Recovery >500ns, > 200mA (Io) | 650ns | Standard | 4pF @ 4V 1MHz | 600V | 1μA @ 600V | 1.2V @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ06FN-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs30wq06fnm3-datasheets-0872.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 3.5A | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 490A | 2mA | 60V | 490A | Schottky | 60V | 3.5A | 1 | 145pF @ 5V 1MHz | 2μA @ 60V | 610mV @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| P600J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-p600je354-datasheets-7002.pdf | P600, Axial | 2 | 18 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | P600J | 2 | Single | 1 | Rectifier Diodes | 22A | 1.3V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 5μA | 600V | 400A | 600V | 2.5 μs | 2.5 μs | Standard | 600V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 600V | 900mV @ 6A | -50°C~150°C | |||||||||||||||||||||||||||||||||
| V15PL50-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-v15pl50m386a-datasheets-0712.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | TO-277A | Schottky | 50V | 6A | 200A | 1 | 6A | 50V | 800μA @ 50V | 570mV @ 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| MBRF560L | SMC Diode Solutions | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | TO-220-2 Full Pack, Isolated Tab | 6 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 220pF @ 5V 1MHz | 60V | 1mA @ 60V | 600mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1JFP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-s1jfp-datasheets-0216.pdf | SOD-123H | 2 | 10 Weeks | 18.4mg | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F2 | CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50A | 600V | 5μA | 1.5 μs | Standard | 600V | 1.2A | 1 | 18pF @ 0V 1MHz | 5μA @ 600V | 1.3V @ 1.2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| V2F6-M3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v2f6m3h-datasheets-0632.pdf | DO-219AB | 13 Weeks | DO-219AB (SMF) | 2A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 250pF @ 4V 1MHz | 60V | 480μA @ 60V | 600mV @ 2A | 2A | -40°C~150°C |
