Products
Manufacturer
RFQ
NEWS
ContactSingle BJT Transistors(15763)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | FET Technology | Power - Max | JEDEC-95 Code | Collector Emitter Voltage (VCEO) | Transition Frequency | DC Current Gain-Min (hFE) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Collector Base Voltage (VCBO) | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Inter-base Voltage-Max | Intrinsic Stand-off Ratio-Max | Intrinsic Stand-off Ratio-Min | Static Inter-base Res-Max | Static Inter-base Res-Min | Valley Point Current-Min | Emitter Current-Max | Peak Point Current-Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMBT3904-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-mmbt39047-datasheets-1134.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | no | EAR99 | compliant | e0 | TIN LEAD | YES | DUAL | GULL WING | 235 | 3 | 10 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | SWITCHING | NPN | 310mW | 300MHz | 40V | 200mA | 250ns | 70ns | 50nA ICBO | NPN | 100 @ 10mA 1V | 300MHz | 300mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||
| 2SA1721RTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | unknown | YES | Other Transistors | Single | PNP | 0.15W | 150mW | 50MHz | 300V | 100mA | 100nA ICBO | PNP | 30 @ 20mA 10V | 50MHz | 500mV @ 2mA, 20mA | |||||||||||||||||||||||||||||||||||||||||||||||
| 2N4870 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~125°C TJ | Bulk | Not Applicable | RoHS Compliant | 2013 | /files/centralsemiconductorcorp-2n4870-datasheets-6844.pdf&product=centralsemiconductorcorp-2n4870-6323550 | TO-226-3, TO-92-3 (TO-226AA) | 3 | no | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Unijunction Transistors | Not Qualified | O-PBCY-T3 | SILICON | SINGLE | SWITCHING | 0.3W | 300mW | PNP | 35V | 0.75 | 0.56 | 9.1 kΩ | 4 kΩ | 2mA | 50mA | 5mA | |||||||||||||||||||||||||||||||||
| TTC009,F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ttc009fj-datasheets-6815.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 80V | 3A | 100nA ICBO | NPN | 100 @ 500mA 5V | 150MHz | 500mV @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4250A | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | 3 | no | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-PBCY-T3 | SILICON | SINGLE | AMPLIFIER | PNP | 0.2W | 200mW | 100MHz | 60V | 10nA ICBO | PNP | 250 @ 100μA 5V | 250mV @ 500μA, 10mA | |||||||||||||||||||||||||||||||||||||
| 2SD2257(CANO,A,Q) | Toshiba Semiconductor and Storage | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FJP13007H2TU-F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-fjp13007h1tuf080-datasheets-7274.pdf | TO-220-3 | 3 | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSFM-T3 | SILICON | SINGLE | SWITCHING | NPN | 80W | 80W | TO-220AB | 4MHz | 400V | 8A | NPN | 8 @ 2A 5V | 4MHz | 3V @ 2A, 8A | ||||||||||||||||||||||||||||||||||||
| 2N3701 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~200°C TJ | Bulk | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-2n3700pbfree-datasheets-4978.pdf | TO-206AA, TO-18-3 Metal Can | 3 | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-MBCY-W3 | SILICON | SINGLE | AMPLIFIER | NPN | 0.5W | 1.8W | 80MHz | 80V | 1A | 10nA ICBO | NPN | 100 @ 150mA 10V | 80MHz | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||
| MMBT3906-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 3 | no | EAR99 | compliant | e0 | TIN LEAD | YES | DUAL | GULL WING | 235 | 3 | 10 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | SWITCHING | PNP | 310mW | 250MHz | 40V | 200mA | 300ns | 70ns | 50nA | PNP | 100 @ 10mA 1V | 250MHz | 400mV @ 5mA, 50mA | ||||||||||||||||||||||||||||||||
| 2SD2695,T6F(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2695t6canoaf-datasheets-6746.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 60V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N2221A PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-2n2222apbfree-datasheets-8839.pdf | TO-206AA, TO-18-3 Metal Can | 3 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | BOTTOM | WIRE | 260 | 30 | 1 | Other Transistors | O-MBCY-W3 | SILICON | SINGLE | SWITCHING | NPN | 0.5W | 1.8W | 250MHz | 40V | 800mA | 285ns | 35ns | 10nA ICBO | NPN | 40 @ 150mA 10V | 250MHz | 1V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||
| S1JVNJD2873T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | 1.68W | 50V | 2A | 100nA ICBO | NPN | 120 @ 500mA 2V | 65MHz | 300mV @ 50mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TTC009,F(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2010 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ttc009fj-datasheets-6815.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 80V | 3A | 100nA ICBO | NPN | 100 @ 500mA 5V | 150MHz | 500mV @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N5139 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | 2010 | 3 | no | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-W3 | SILICON | TO-92 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3564 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | e0 | Tin/Lead (Sn/Pb) | NO | 125°C | Other Transistors | Single | NPN | 0.2W | 400MHz | 15V | 50nA ICBO | NPN | 20 @ 15mA 10V | 400MHz | 300mV @ 2mA, 10mA | |||||||||||||||||||||||||||||||||||||||||||||||||
| CEN363 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2257(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3955 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DEPLETION MODE | Non-RoHS Compliant | 8 | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 8 | 200°C | NOT SPECIFIED | FET General Purpose Small Signal | Not Qualified | O-XBCY-W8 | SILICON | N-CHANNEL | 0.5W | JUNCTION | TO-71 | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N5134 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | 125°C | Other Transistors | Single | NPN | 0.2W | 250MHz | 10V | 400nA ICBO | NPN | 20 @ 10mA 1V | 250MHz | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SD2257(CANO,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3565 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | 3 | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 3 | 125°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-PBCY-W3 | SILICON | Single | NPN | 0.2W | 0.05A | 25V | TO-92 | 40MHz | 10 | |||||||||||||||||||||||||||||||||||||||||
| 2SD2206(TE6,F,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 3 | No | Single | 900mW | 100V | 2A | 100V | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N4250 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | 3 | no | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-PBCY-T3 | SILICON | SINGLE | AMPLIFIER | PNP | 0.2W | 200mW | 50MHz | 40V | 10nA ICBO | PNP | 250 @ 10mA 5V | 50MHz | 250mV @ 500μA, 10mA | ||||||||||||||||||||||||||||||||||||
| 2N4916 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | 4 | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | O-XBCY-W4 | SILICON | Single | PNP | 0.2W | 0.2A | 400MHz | 30V | PNP | 70 @ 10mA 1V | 400MHz | 300mV @ 5mA, 50mA | ||||||||||||||||||||||||||||||||||||
| 2SD2129,LS4ALPSQ(M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2129alpsqm-datasheets-1290.pdf | TO-220-3 Full Pack | TO-220NIS | 2W | 100V | 3A | 100μA ICBO | NPN | 2000 @ 1.5A 3V | 2V @ 12mA, 3A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3563 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | 4 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | 3 | 125°C | 1 | Other Transistors | Not Qualified | O-MBCY-W4 | SILICON | SINGLE | AMPLIFIER | NPN | 0.2W | 600MHz | 12V | 50nA ICBO | NPN | 20 @ 8mA 10V | 1.7pF | 600MHz | ||||||||||||||||||||||||||||||||||||||
| 2SD2206(T6CANO,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2206t6cnoaf-datasheets-6695.pdf | TO-226-3, TO-92-3 Long Body | 900mW | 100V | 2A | 10μA ICBO | NPN | 2000 @ 1A 2V | 100MHz | 1.5V @ 1mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3640 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2008 | TO-106-3 Domed | 4 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | BOTTOM | WIRE | 3 | 125°C | 1 | Other Transistors | Not Qualified | O-MBCY-W4 | SILICON | SINGLE | SWITCHING | PNP | 0.2W | 500MHz | 12V | 10nA ICBO | PNP | 30 @ 10mA 300mV | 3.5pF | 500MHz | |||||||||||||||||||||||||||||||||||||
| 2SD2257,NIKKIQ(J | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sd2257kehinqj-datasheets-6764.pdf | TO-220-3 Full Pack | 2W | 100V | 3A | 10μA ICBO | NPN | 2000 @ 2A 2V | 1.5V @ 1.5mA, 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3646 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-106-3 Domed | no | EAR99 | not_compliant | 8541.21.00.75 | e0 | Tin/Lead (Sn/Pb) | NO | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | SILICON | SINGLE | SWITCHING | NPN | 0.2W | 200mW | 350MHz | 15V | 200mA | 28ns | 18ns | 500nA | NPN | 30 @ 30mA 400mV | 350MHz | 500mV @ 30mA, 300mA |
