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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Series | Voltage - Rated | Frequency | Package / Case | Gain | Supplier Device Package | Noise Figure | Power - Output | Current Rating (Amps) | Current - Test | Transistor Type | Voltage - Test | Mfr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BLC10G22XS-603AVTY | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 65 V | 2.11GHz ~ 2.17GHz | SOT-1258-4 | 15.4dB | SOT1258-4 | - | 600W | 2.8μA | 1.2 A | LDMOS (Dual), Common Source | 30 V | Ampleon USA Inc. | |||
| MRFIC1501R2 | Freescale Semiconductor, Inc. (NXP Semiconductors) |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Freescale Semiconductor | ||||||||||||||
| AFV10700HR5178 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP Semiconductors | ||||||||||||||
| CLF1G0035S-100 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP Semiconductors | ||||||||||||||
| BLF1046 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Rochester Electronics, LLC | ||||||||||||||
| A3I20X050NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | A3I20X050N | 65 V | 1.8GHz ~ 2.2GHz | OM-400-8 | 29.3dB | OM-400-8 | - | 6.3W | 10μA | 145 mA | LDMOS (Dual) | 28 V | NXP USA Inc. | |||
| A2V09H400-04SR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 105 V | 720MHz ~ 960MHz | NI-780S-4L | 18.7dB | NI-780S-4L | - | 102W | 10μA | 750 mA | LDMOS (Dual) | 48 V | NXP USA Inc. | |||
| A3I25D080GNR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 65 V | 2.3GHz ~ 2.69GHz | TO-270-17 Variant, Gull Wing | 29.2dB | TO-270WBG-17 | - | 8.3W | 10μA | 175 mA | LDMOS (Dual) | 28 V | NXP USA Inc. | |||
| A5G35S008NT6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP USA Inc. | ||||||||||||||
| A5G26S004NT6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP USA Inc. | ||||||||||||||
| A3G26H200W17SR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | 125 V | 2.496GHz ~ 2.69GHz | NI-780S-4S2S | 14.2dB | NI-780S-4S2S | - | 34W | - | 120 mA | - | 48 V | NXP USA Inc. | ||||
| MWT-PH8F | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | 26GHz | Die | 12dB | Chip | - | 30dBm | 300mA | 1 mA | pHEMT FET | 3 V | Microwave Technology Inc. | |||||
| MWT-PH31F | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 18GHz | Die | 13dB | Chip | - | 30dBm | 280mA | 1 mA | pHEMT FET | 2 V | Microwave Technology Inc. | ||||
| MWT-PH33F | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | 26GHz | Die | 14dB | Chip | - | 24dBm | 90mA | 1 mA | pHEMT FET | 3 V | Microwave Technology Inc. | |||||
| MWT-5F | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | 500MHz ~ 26GHz | Die | 19dB | Chip | 3.5dB @ 12GHz | - | 80mA | 30 mA | GaAs FET | 6 V | Microwave Technology Inc. | |||||
| MWT-PH27F | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 26GHz | Die | 14dB | Chip | - | 25dBm | 120mA | 1 mA | pHEMT FET | 3 V | Microwave Technology Inc. | ||||
| MWT-PH32F | Microwave Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | 12GHz | Die | 13dB | Chip | - | 30.5dB | 360mA | 1 mA | pHEMT FET | 2 V | Microwave Technology Inc. | |||||
| CLF3H0060-30U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 150 V | 0Hz ~ 6GHz | SOT-1227A | 17dB | CDFM2 | - | 30W | - | 60 mA | HEMT | 50 V | Ampleon USA Inc. | |||
| CLF3H0035S-100U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | 150 V | 0Hz ~ 3.5GHz | SOT-467B | 15dB | SOT-467B | - | 100W | - | 300 mA | HEMT | 50 V | Ampleon USA Inc. | ||||
| C4H22W500AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 150 V | 2.11GHz ~ 2.17GHz | SOT-1273-1 | 16dB | SOT1273-1 | - | 500W | - | 450 mA | 2 N-Channel (Dual) Common Source | 50 V | Ampleon USA Inc. | |||
| CLF1G0060-30 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Rochester Electronics, LLC | ||||||||||||||
| CLF1G0060S-10 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP Semiconductors | ||||||||||||||
| CLF1G0060S-10 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Rochester Electronics, LLC | ||||||||||||||
| AFV10700HSR5178 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP Semiconductors | ||||||||||||||
| CLF1G0035-100P | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP Semiconductors | ||||||||||||||
| BLA1011-300 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | Rochester Electronics, LLC | ||||||||||||||
| B10G3438N55DZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 65 V | 3.4GHz ~ 3.8GHz | 34.2dB | - | 47.5dBm | 75 mA | LDMOS | 28 V | Ampleon USA Inc. | ||||||
| A3T09S100NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 65 V | 136MHz ~ 941MHz | TO-270-2 | 22.8dB | TO-270-2 | - | 100W | 10μA | 450 mA | LDMOS | 28 V | NXP USA Inc. | |||
| A3I25D080NR1 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 65 V | 2.3GHz ~ 2.69GHz | TO-270-17 Variant, Flat Leads | 29.2dB | TO-270WB-17 | - | 8.3W | 10μA | 175 mA | LDMOS (Dual) | 28 V | NXP USA Inc. | |||
| A3G18D510-04SR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | 125 V | 1.805GHz ~ 2.2GHz | NI-780S-4L | 16dB | NI-780S-4L | - | 56W | - | 250 mA | - | 48 V | NXP USA Inc. |
