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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Current - Test | Drain Current-Max (Abs) (ID) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RFM01U7P(TE12L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 520MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | 1A | TO-243AA | unknown | YES | 3W | 150°C | FET General Purpose Power | 10.8dB | 1A | 10V | Single | 20V | METAL-OXIDE SEMICONDUCTOR | 1.2W | 100mA | 1A | N-Channel | 7.2V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3557-6-TB-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | 1kHz | DEPLETION MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-2sk35576tbe-datasheets-7679.pdf | 50mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | Lead Free | 3 | 9 Weeks | 1.437803g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | LOW NOISE | Tin | 8541.21.00.95 | e6 | YES | 200mW | DUAL | GULL WING | 2SK3557 | 3 | Single | 200mW | 1 | 1dB | 50mA | -15V | AMPLIFIER | 15V | JUNCTION | 1mA | 0.05A | N-Channel JFET | 5V | |||||||||||||||||||||||||
| 2SK4085LS-1E | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-2sk4085ls1e-datasheets-7780.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA9H0912L-700GU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 106V | 960MHz~1.215GHz | /files/ampleonusainc-bla9h0912ls700u-datasheets-7710.pdf | SOT-502F | 13 Weeks | 20dB | 700W | 2.8μA | 100mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA8H0910L-500U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 114.5V | 900MHz~930MHz | ROHS3 Compliant | 2011 | /files/ampleonusainc-bla8h0910ls500u-datasheets-7704.pdf | SOT-502A | 13 Weeks | 19dB | 500W | 2.8μA | 90mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLL9G1214LS-600U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 65V | 1.2GHz~1.4GHz | ROHS3 Compliant | /files/ampleonusainc-bll9g1214l600u-datasheets-7713.pdf | SOT-502B | 13 Weeks | 19dB | 600W | 5μA | 400mA | LDMOS | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G24LS-150GVQ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf8g24ls150vu-datasheets-7640.pdf | SOT-1244C | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 19dB | R-CDSO-G6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 1.3A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||
| BLC10G20LS-240PWTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.805GHz~1.995GHz | ROHS3 Compliant | /files/ampleonusainc-blc10g20ls240pwtz-datasheets-7742.pdf | SOT1275-3 | 13 Weeks | 19.3dB | 60W | 1.4μA | 1.6A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3756(TE12L,F) | Toshiba Semiconductor and Storage | $5.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 470MHz | ENHANCEMENT MODE | RoHS Compliant | 2009 | 1A | TO-243AA | 4 Weeks | EAR99 | unknown | YES | 3W | 150°C | FET General Purpose Powers | 12dB | 1A | 3V | Single | 7.5V | METAL-OXIDE SEMICONDUCTOR | 32dBm | 200mA | 1A | N-Channel | 4.5V | |||||||||||||||||||||||||||||||||||||||||||
| BLF8G38LS-75VU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 3.4GHz~3.6GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blf8g38ls75vu-datasheets-7748.pdf | SOT-1239B | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | 15.5dB | R-CQFP-X6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 20W | 600mA | LDMOS | 30V | |||||||||||||||||||||||||||||||||||||
| CE3514M4 | CEL (California Eastern Laboratories) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Strip | 1 (Unlimited) | 4V | 12GHz | DEPLETION MODE | ROHS3 Compliant | 15mA | 4-SMD, Flat Leads | 4 | 7 Weeks | yes | YES | DUAL | 125°C | -55°C | 1 | 12.2dB | R-PDSO-F4 | 0.62dB | SILICON | SINGLE | AMPLIFIER | N-CHANNEL | 3V | JUNCTION | 125mW | 10mA | 0.015A | pHEMT FET | 2V | ||||||||||||||||||||||||||||||||||||||||
| PD20010TR-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-pd20010tre-datasheets-7729.pdf | 5A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 2 | 25 Weeks | 3 | EAR99 | ESD PROTECTION, HIGH RELIABILITY | 59W | DUAL | GULL WING | NOT SPECIFIED | PD20010 | 10 | Single | NOT SPECIFIED | 59W | 1 | FET General Purpose Power | 11dB | Not Qualified | R-PDSO-G2 | 5A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 15W | 10W | 150mA | 5A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||||||
| BLA9H0912L-250GU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 106V | 960MHz~1.215GHz | /files/ampleonusainc-bla9h0912l250u-datasheets-7689.pdf | SOT-502F | 13 Weeks | 22dB | 250W | 1.4μA | 100mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA9H0912LS-250GU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 106V | 960MHz~1.215GHz | /files/ampleonusainc-bla9h0912l250u-datasheets-7689.pdf | SOT-502E | 13 Weeks | 22dB | 250W | 1.4μA | 100mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P26080HSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 2.62GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | NI-780S-4 | 4 | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF8P26080 | 225°C | 40 | 2 | FET General Purpose Power | 15dB | Not Qualified | R-CDFP-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 14W | 300mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||
| LET20045C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 150°C | -65°C | 2GHz | ENHANCEMENT MODE | ROHS3 Compliant | 12A | M243 | Lead Free | 2 | 3 | EAR99 | No | 130W | DUAL | FLAT | LET20045 | 2 | Single | 1 | FET General Purpose Powers | 13.3dB | R-PDFM-F2 | 12A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 54W | 500mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||
| BLL9G1214L-600U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 1.2GHz~1.4GHz | ROHS3 Compliant | /files/ampleonusainc-bll9g1214l600u-datasheets-7713.pdf | SOT-502A | 13 Weeks | 19dB | 600W | 5μA | 400mA | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC8G27LS-180AVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.5GHz~2.69GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ampleonusainc-blc8g27ls180avz-datasheets-7665.pdf | SOT1275-3 | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | QUAD | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | 14dB | R-PQFP-X6 | SILICON | COMMON SOURCE, 2 ELEMENTS | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 28W | 200mA | LDMOS (Dual), Common Source | 28V | ||||||||||||||||||||||||||||||||||||||
| BLC9G20LS-160PVZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 1.805GHz~2GHz | /files/ampleonusainc-blc9g20ls160pvz-datasheets-7668.pdf | SOT1275-1 | 13 Weeks | 20dB | 38W | 1.4μA | 860mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC9G10XS-120AZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 920MHz~960MHz | ROHS3 Compliant | /files/ampleonusainc-blc9g10xs120az-datasheets-7672.pdf | SOT1273-1 | 13 Weeks | 21dB | 120W | 1.4μA | 120mA | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G2735L-50U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 32V | 2.7GHz~3.5GHz | /files/ampleonusainc-bls9g2735ls50u-datasheets-7656.pdf | SOT-1135A | 13 Weeks | 12dB | 50W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS9G2934L-400U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.9GHz~3.4GHz | /files/ampleonusainc-bls9g2934l400u-datasheets-7682.pdf | SOT-502A | 13 Weeks | 12dB | 400W | 4μA | 400mA | LDMOS | 32V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF8G27LS-140,112 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.62GHz~2.69GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ampleonusainc-blf8g27ls140112-datasheets-7686.pdf | SOT-502B | 2 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF8G27 | NOT SPECIFIED | 1 | 17.4dB | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 45W | 1.3A | LDMOS | 32V | ||||||||||||||||||||||||||||||||||||
| BLA9H0912L-250U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 106V | 960MHz~1.215GHz | /files/ampleonusainc-bla9h0912l250u-datasheets-7689.pdf | SOT-502A | 13 Weeks | 22dB | 250W | 1.4μA | 100mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLC10G22LS-240PVTZ | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | 65V | 2.11GHz~2.2GHz | ROHS3 Compliant | /files/ampleonusainc-blc10g22ls240pvtz-datasheets-7692.pdf | SOT1275-3 | 13 Weeks | 19.7dB | 60W | 1.4μA | 1.6A | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA9H0912LS-250U | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 106V | 960MHz~1.215GHz | /files/ampleonusainc-bla9h0912l250u-datasheets-7689.pdf | SOT-502B | 13 Weeks | 22dB | 250W | 1.4μA | 100mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8S26120HR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.69GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | SOT-957A | 2 | 5A991 | 8541.29.00.75 | YES | DUAL | FLAT | 260 | MRF8S26120 | 225°C | 40 | 1 | 15.6dB | Not Qualified | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 28W | 900mA | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||
| BLF8G20LS-400PVQ | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | 1 (Unlimited) | 65V | 1.81GHz~1.88GHz | ROHS3 Compliant | 2010 | /files/nxpusainc-blf8g20ls400pvq-datasheets-7647.pdf | SOT-1242B | BLF8G20 | 8 | 19dB | 95W | 3.4A | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8S21120HSR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 2.17GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-mrf8s21120hsr3-datasheets-7699.pdf | NI-780S | 2 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | DUAL | FLAT | 260 | MRF8S21120 | 225°C | 40 | 1 | FET General Purpose Power | 17.6dB | Not Qualified | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 28W | 850mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||
| BLF8G24LS-100VU | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 1 (Unlimited) | 65V | 2.3GHz~2.4GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/ampleonusainc-blf8g24ls100vu-datasheets-7649.pdf | SOT-1244B | 6 | 13 Weeks | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | 18dB | R-CDFP-F6 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 25W | 900mA | LDMOS | 28V |
