Products
Manufacturer
RFQ
NEWS
ContactRectifier Diode Array (12345)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Pbfree Code | Gender | Number of Contacts | Orientation | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Voltage Rating (AC) | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-10AWT10HE3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D030A120U | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/semiq-gp2d030a120u-datasheets-4523.pdf | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | 1200V | 30μA @ 1200V | 1.8V @ 15A | 50A DC | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAT54C-BO-E3-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Common Cathode | SOT-23 | Small Signal =< 200mA (Io), Any Speed | 5 ns | Schottky | 30V | 200mA | 30V | 2μA @ 25V | 800mV @ 100mA | 200mA DC | 125°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR10200CS2-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-mbr10200cde1-datasheets-4504.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 150μA | Schottky | 100A | 1 | 5A | 200V | 150μA @ 200V | 950mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBR15100CT-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr15100ctfg1-datasheets-4529.pdf | TO-220-3 | 3 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | TO-220AB | Schottky | 150A | 1 | 7.5A | 100V | 100μA @ 100V | 850mV @ 7.5A | 7.5A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| LFUSCD20120B | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/littelfuseinc-lfuscd20120b-datasheets-4496.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | EAR99 | PD-CASE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | 272W | 250μA | Silicon Carbide Schottky | 1.2kV | 10A | 80A | 1 | 1200V | 250μA @ 1200V | 1.7V @ 20A | 10A DC | 175°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| IDW20S120FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2012 | /files/rochesterelectronicsllc-idw20s120fksa1-datasheets-8752.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | R-PSFM-T3 | 1.8V | EFFICIENCY | No Recovery Time > 500mA (Io) | 115W | 480μA | 1.2kV | 106A | Silicon Carbide Schottky | 1.2kV | 10A | 266A | 1 | 1200V | 240μA @ 1200V | 1.8V @ 10A | 10A DC | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
| DD1200S33KL2CB5NOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2013 | /files/infineontechnologies-dd1200s33kl2cb5nosa1-datasheets-4501.pdf | Block, 4 Lead | Contains Lead | 4 | EAR99 | 8541.10.00.80 | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | 125°C | NOT SPECIFIED | 2 | R-XUFM-X4 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 3.3kV | 1.2kA | 1 | 1200A | 3300V | 1700A @ 1800V | 3.5V @ 1200A | 1200A DC | -40°C~125°C | 2 Independent | ||||||||||||||||||||||||||||||||||||
| MBR10200CD-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr10200cde1-datasheets-4504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 150μA | Schottky | 100A | 1 | 5A | 200V | 150μA @ 200V | 950mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBR10100CDTR-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr10100ctfe1-datasheets-4420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 100A | 1 | 5A | 100V | 100μA @ 100V | 850mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBRTA50045 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | 7 Weeks | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X3 | 500A | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky | 45V | 250A | 1 | 1mA @ 45V | 700mV @ 250A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||
| MBR10200CS2-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-mbr10200cde1-datasheets-4504.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 150μA | Schottky | 100A | 1 | 5A | 200V | 150μA @ 200V | 950mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBR10100CS2-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-mbr10100ctfe1-datasheets-4420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 100A | 1 | 5A | 100V | 100μA @ 100V | 850mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBR10100CDTR-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr10100ctfe1-datasheets-4420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 100A | 1 | 5A | 100V | 100μA @ 100V | 850mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBR10200CD-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr10200cde1-datasheets-4504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 150μA | Schottky | 100A | 1 | 5A | 200V | 150μA @ 200V | 950mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| BAV99UE6359HTMA1 |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR1060CTF-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr1060ctfe1-datasheets-4516.pdf | TO-220-3 Full Pack | 5 Weeks | TO-220F-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 750mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDW24G65C5BXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/infineontechnologies-idw24g65c5bxksa1-datasheets-4489.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | EAR99 | PD-CASE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | 152W | 190μA | Silicon Carbide Schottky | 650V | 12A | 56A | 1 | 190μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||
| MBR10200CDTR-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr10200cde1-datasheets-4504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSSO-G2 | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 150μA | Schottky | 100A | 1 | 5A | 200V | 150μA @ 200V | 950mV @ 5A | 5A | 150°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MURF30060 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | TO-244AB | 2 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X2 | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 150ns | Standard | 600V | 150A | 2750A | 1 | 25μA @ 600V | 1.7V @ 150A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| MBRF20H100CTGHE3/4 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrf20h100ctge345-datasheets-2798.pdf | TO-220-3 Isolated Tab | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 2 | Not Qualified | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | TO-220AB | Schottky | 150A | 1 | 10A | 100V | 4.5μA @ 100V | 770mV @ 10A | 10A | -65°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| MBR10150CTF-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr10150ctfe1-datasheets-4494.pdf | TO-220-3 Full Pack | 5 Weeks | TO-220F-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 920mV @ 5A | 5A | 175°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAT54C-BO-HE3-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Common Cathode | SOT-23 | Small Signal =< 200mA (Io), Any Speed | 5 ns | Schottky | 30V | 200mA | 30V | 2μA @ 25V | 800mV @ 100mA | 200mA DC | 125°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRTA80060R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | Common Anode | 2 | R-PUFM-X3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | Schottky | 60V | 400A | 6000A | 1 | 1mA @ 60V | 780mV @ 400A | -55°C~150°C | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||
| MBRTA50080 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | Bulk | 1 (Unlimited) | Solder | 105°C | -40°C | RoHS Compliant | Three Tower | 3 | 7 Weeks | Male | 12 | Straight | 100mOhm | UPPER | UNSPECIFIED | Common Cathode | 2 | R-PUFM-X3 | 3mm | 500A | 250V | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 80V | Schottky | 80V | 250A | 1 | 1mA @ 80V | 840mV @ 250A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||
| MURF30040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | TO-244AB | 2 | UPPER | UNSPECIFIED | 150°C | Common Cathode | 2 | R-PUFM-X2 | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 110ns | Standard | 400V | 150A | 2750A | 1 | 25μA @ 400V | 1.3V @ 150A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| BAT54A-DEL-E3-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD1200S33K2CNOSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-dd1200s33k2cnosa1-datasheets-4474.pdf | Block, 4 Lead | 4 | no | EAR99 | not_compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | 125°C | NOT SPECIFIED | 2 | Other Diodes | Not Qualified | R-XUFM-X4 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2400000W | 3300V | Standard | 1 | 1200A | 3300V | 1700A @ 1800V | 3.5V @ 1200A | 1200A DC | -40°C~125°C | 2 Independent | |||||||||||||||||||||||||||||||||
| MBRTA80045RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | Three Tower | 3 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | Common Anode | 2 | R-PUFM-X3 | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 6000μA | Schottky | 45V | 400A | 6000A | 1 | 6mA @ 45V | 600mV @ 400A | -55°C~150°C | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||
| MBR30H100CT81E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 5μA @ 100V | 820mV @ 15A | 15A | -65°C~175°C | 1 Pair Common Cathode |
