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ContactRectifier Diode Array (12345)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Test Voltage | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration |
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| VS-MBR1535CT-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vsmbr1535ctm3-datasheets-4857.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 100μA @ 35V | 840mV @ 15A | 7.5A | -65°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15CTQ035-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs15ctq045m3-datasheets-4794.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 800μA @ 35V | 700mV @ 15A | 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT1080C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt1080ce38w-datasheets-4713.pdf | TO-220-3 | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 10A | 80A | 12μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 80V | 80A | TO-220AB | Schottky | 80V | 5A | 1 | 5A | 400μA @ 80V | 720mV @ 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||
| MBRF10H200CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-mbrf10200ctc0g-datasheets-6194.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | LOW POWER LOSS, UL RECOGNIZED | 8541.10.00.80 | NO | SINGLE | 175°C | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | TO-220AB | Schottky | 120A | 1 | 5A | 200V | 5μA @ 200V | 970mV @ 10A | 10A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| TSF20L120C C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsf20l150cc0g-datasheets-2339.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 14 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | SINGLE | 150°C | 2 | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120V | 100μA | TO-220AB | Schottky | 100A | 1 | 10A | 120V | 100μA @ 120V | 920mV @ 10A | 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||
| V20DM120HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 1 | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | TO-263AC | Schottky | 120V | 10A | 150A | 1 | 5.5A | 600μA @ 120V | 930mV @ 10A | -40°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||
| VBT2060C-E3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vbt2060ce38w-datasheets-4776.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 10A | 150A | 1 | 850μA @ 60V | 650mV @ 10A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||
| VFT1045CBP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vft1045cbpm34w-datasheets-4824.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | 3 | Common Cathode | ITO-220AB | 10A | 580mV | 100A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 100A | 500μA | 45V | 100A | Schottky | 45V | 5A | 45V | 500μA @ 45V | 580mV @ 5A | 5A | 200°C Max | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| VS-16CDH02-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs16cdh02m3i-datasheets-4774.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | Lead Free | 2 | 14 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | Common Cathode | NOT SPECIFIED | 2 | R-PSSO-G2 | 16A | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 27 ns | Standard | 200V | 8A | 1 | 8A | 2μA @ 200V | 1.03V @ 8A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||
| HERF1608G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-herf1605gc0g-datasheets-1500.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 10μA @ 1000V | 1.7V @ 8A | 16A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 30CTQ040-1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | TO-262-3 Long Leads, I2Pak, TO-262AA | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1mA @ 40V | 620mV @ 15A | 15A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT10200C-E3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vbt10200ce34w-datasheets-0125.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 1.369991g | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 580mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 150μA | 200V | 80A | Schottky | 200V | 5A | 1 | 5A | 150μA @ 200V | 1.6V @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||
| VBT2060C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt2060ce38w-datasheets-4776.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 10A | 150A | 1 | 850μA @ 60V | 650mV @ 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||
| MBR1060CTF-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr1060ctfg1-datasheets-4785.pdf | TO-220-3 Full Pack | 17 Weeks | TO-220F-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 100μA @ 60V | 750mV @ 5A | 5A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT3060G-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt3060ge34w-datasheets-4787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | 150°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 15A | 150A | 1 | 850μA @ 60V | 730mV @ 15A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||
| VFT1045C-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vft1045cm34w-datasheets-4792.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 10A | 100A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 45V | 100A | TO-220AB | Schottky | 45V | 5A | 1 | 5A | 500μA @ 45V | 580mV @ 5A | -40°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||
| VS-15CTQ045-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs15ctq045m3-datasheets-4794.pdf | TO-220-3 | 12 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 800μA @ 45V | 700mV @ 15A | 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBRV660VCTT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/onsemiconductor-mbrd660ctt4g-datasheets-0084.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | MBRD660CT | 175°C | 2 | R-PSSO-G2 | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 60V | 100μA | 60V | Schottky | 75A | 1 | 3A | 60V | 100μA @ 60V | 700mV @ 3A | 3A | -65°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||
| HER1608G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-her1604gc0g-datasheets-4466.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 10μA @ 1000V | 1.7V @ 8A | 16A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRS1545CTHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-mbrs1545cthmng-datasheets-4812.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 100μA @ 45V | 840mV @ 15A | 15A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVSRD620VCTT4RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/onsemiconductor-nrvsrd620vctt4rg-datasheets-4663.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 22 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | MSRD620CT | 175°C | 2 | R-PSSO-G2 | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 1μA | 75ns | Standard | 45A | 1 | 3A | 200V | 1μA @ 200V | 1.15V @ 3A | 3A | -65°C~175°C | 1 Pair Common Anode | |||||||||||||||||||||||||||||||||||||
| MBRS10150CTHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-mbrs1035ctmng-datasheets-4451.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 980mV @ 10A | 10A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPS20150CR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stps20150ct-datasheets-2394.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 11 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | STPS20150 | 3 | 175°C | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 180A | 5μA | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 150V | 10A | 1 | 5μA @ 150V | 920mV @ 10A | 175°C Max | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||
| TSD20H200CW MNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2017 | /files/taiwansemiconductorcorporation-tsd20h120cwmng-datasheets-1392.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | LOW POWER LOSS | e3 | Matte Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | -55°C | NOT SPECIFIED | 2 | R-PSSO-G2 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | SILICON | 200V | 100μA | 0.93V | RECTIFIER DIODE | 150A | 1 | 10A | ||||||||||||||||||||||||||||||||||||||||||||
| MBRF2080CT C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-mbrf20200ctc0g-datasheets-6235.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | EAR99 | LOW POWER LOSS, UL RECOGNIZED | 8541.10.00.80 | NO | SINGLE | 150°C | 2 | Rectifier Diodes | R-PSFM-T3 | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 100μA | Schottky | 150A | 1 | 10A | 80V | 100μA @ 80V | 1V @ 20A | 20A | -55°C~150°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||
| DLA5P800UC-TRL | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/ixys-dla5p800uctrl-datasheets-4728.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 175°C | 2 | R-PSSO-G2 | ANODE AND CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 60W | 800V | 5μA | TO-252AA | Standard | 64A | 1 | 5A | 800V | 5μA @ 800V | 1.18V @ 5A | 5A | -55°C~175°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||
| VBT1080C-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt1080ce38w-datasheets-4713.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 80A | 12μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 80V | 80A | Schottky | 80V | 5A | 1 | 5A | 400μA @ 80V | 720mV @ 5A | -55°C~150°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||
| NRVHP820MFDWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 | RoHS Compliant | 2013 | /files/onsemiconductor-nrvhp820mfdwft1g-datasheets-0661.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | FREE WHEELING DIODE | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PDSO-F6 | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 0.5μA | 30ns | Standard | 80A | 1 | 4A | 200V | 500nA @ 200V | 1.05V @ 8A | 4A | -55°C~175°C | 2 Independent | |||||||||||||||||||||||||||||||||||||
| MBRS10H150CT MNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-mbrs10h150ctmng-datasheets-4733.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 5μA @ 150V | 970mV @ 10A | 10A | -55°C~175°C | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HER1603G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-her1604gc0g-datasheets-4466.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 200V | 10μA @ 200V | 1V @ 8A | 16A | -55°C~150°C | 1 Pair Common Cathode |
