Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Series | Mounting Type | Package / Case | Supplier Device Package | Power - Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mfr |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PDTA123JQCZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 | 360 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 100 @ 10mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 47 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTC144EQC-QZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 | 360 mW | 50 V | 100 mA | 100nA | NPN - Pre-Biased | 80 @ 5mA, 5V | 230 MHz | 100mV @ 500μA, 10mA | 47 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTC124XQC-QZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 | 360 mW | 50 V | 100 mA | 100nA | NPN - Pre-Biased | 80 @ 5mA, 5V | 230 MHz | 100mV @ 500μA, 10mA | 22 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTC124EQB-QZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | NPN - Pre-Biased | 60 @ 5mA, 5V | 230 MHz | 100mV @ 500μA, 10mA | 22 kOhms | 22 kOhms | Nexperia USA Inc. | |||
PDTC123JQCZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 | 360 mW | 50 V | 100 mA | 100nA | NPN - Pre-Biased | 100 @ 10mA, 5V | 230 MHz | 100mV @ 250μA, 5mA | 2.2 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTC114EQB-QZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | NPN - Pre-Biased | 30 @ 5mA, 5V | 230 MHz | 100mV @ 500μA, 10mA | 10 kOhms | 10 kOhms | Nexperia USA Inc. | |||
PDTA114YQCZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 | 360 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 100 @ 5mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 10 kOhms | 47 kOhms | Nexperia USA Inc. | |||
HR1F3P(0)-T1-AZ | Renesas |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | TO-243AA | SC-62 | 2 W | 60 V | 1 A | 100nA | PNP - Pre-Biased | 100 @ 500mA, 2V | 350mV @ 10mA, 500mA | 2 kOhms | 10 kOhms | Renesas | ||||
GA4F3M(0)-T1-A | Renesas |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount | SC-70, SOT-323 | SC-70 | 150 mW | 50 V | 100 mA | 100nA | NPN - Pre-Biased | 50 @ 50mA, 5V | 200mV @ 250μA, 5mA | 2 kOhms | 2 kOhms | Renesas | ||||
PDTA144EQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 80 @ 5mA, 5V | 180 MHz | 100mV @ 500μA, 10mA | 47 kOhms | 47 kOhms | Nexperia USA Inc. | |||
RN2401,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 30 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 4.7 kOhms | Toshiba Semiconductor and Storage | |||
RN2406,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||
RN1113,LXHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | SC-75, SOT-416 | SSM | 100 mW | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 120 @ 1mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 47 kOhms | Toshiba Semiconductor and Storage | ||||
RN2413,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 120 @ 1mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 47 kOhms | Toshiba Semiconductor and Storage | ||||
RN2405,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 80 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 2.2 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||
RN1404,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Automotive, AEC-Q101 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 250 MHz | 300mV @ 250μA, 5mA | 47 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||
PDTC143EQAZ | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | * | NXP Semiconductors | ||||||||||||||||
PDTC114EQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 30 @ 5mA, 5V | 180 MHz | 100mV @ 500μA, 10mA | 10 kOhms | 10 kOhms | Nexperia USA Inc. | |||
PDTC124XQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 80 @ 5mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 22 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTC114YQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 100 @ 5mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 10 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTC143XQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 50 @ 10mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 4.7 kOhms | 10 kOhms | Nexperia USA Inc. | |||
PDTA143EQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 30 @ 10mA, 5V | 180 MHz | 100mV @ 500μA, 10mA | 4.7 kOhms | 4.7 kOhms | Nexperia USA Inc. | |||
PDTA143ZQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 100 @ 10mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 4.7 kOhms | 47 kOhms | Nexperia USA Inc. | |||
PDTA124EQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 60 @ 5mA, 5V | 180 MHz | 100mV @ 500μA, 10mA | 22 kOhms | 22 kOhms | Nexperia USA Inc. | |||
PDTA114EQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 30 @ 5mA, 5V | 180 MHz | 100mV @ 500μA, 10mA | 10 kOhms | 10 kOhms | Nexperia USA Inc. | |||
PDTC143ZQBZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | - | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 340 mW | 50 V | 100 mA | 100nA | PNP - Pre-Biased | 100 @ 10mA, 5V | 180 MHz | 100mV @ 250μA, 5mA | 4.7 kOhms | 47 kOhms | Nexperia USA Inc. | |||
RN1102MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 50 @ 10mA, 5V | 300mV @ 500μA, 5mA | 10 kOhms | 10 kOhms | Toshiba Semiconductor and Storage | |||||
RN1104MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | SOT-723 | VESM | 150 mW | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 80 @ 10mA, 5V | 300mV @ 500μA, 5mA | 47 kOhms | 47 kOhms | Toshiba Semiconductor and Storage | |||||
RN2410,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 120 @ 1mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 4.7 kOhms | Toshiba Semiconductor and Storage | |||||
RN2402,LXHF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200 mW | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 50 @ 10mA, 5V | 200 MHz | 300mV @ 250μA, 5mA | 10 kOhms | 10 kOhms | Toshiba Semiconductor and Storage |
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