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ContactPre-Biased BJT Transistors(3991)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Power - Max | JEDEC-95 Code | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Power Dissipation Ambient-Max | VCEsat-Max | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBRN113ES,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/nxpusainc-pbrn113ek115-datasheets-8933.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PBRN113 | TO-92-3 | 700mW | 40V | 800mA | 500nA | NPN - Pre-Biased | 180 @ 300mA 5V | 1.15V @ 8mA, 800mA | 1 kOhms | 1 kOhms | |||||||||||||||||||||||||||||||||
| PDTC143XK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/nexperiausainc-pdtc143xt215-datasheets-1884.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | BUILT-IN BIAS RESISTOR RATIO IS 2.1 | unknown | 8541.21.00.95 | e3 | TIN | YES | DUAL | GULL WING | NOT SPECIFIED | DTC143 | 3 | NOT SPECIFIED | 1 | BIP General Purpose Small Signals | Not Qualified | R-PDSO-G3 | 2013-06-14 00:00:00 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 0.25W | 250mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 50 @ 10mA 5V | 100mV @ 500μA, 10mA | 4.7 k Ω | 10 k Ω | |||||||||||
| PBRN123YS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/nexperiausainc-pbrn123yt215-datasheets-4573.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PBRN123 | TO-92-3 | 700mW | 40V | 800mA | 500nA | NPN - Pre-Biased | 500 @ 300mA 5V | 1.15V @ 8mA, 800mA | 2.2 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
| PDTD113ZS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtd113zt215-datasheets-3128.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTD113 | 500mW | 50V | 500mA | 500nA | NPN - Pre-Biased | 70 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 1 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||
| PBRN123EK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/nexperiausainc-pbrn123et215-datasheets-4708.pdf | TO-236-3, SC-59, SOT-23-3 | PBRN123 | 250mW | 40V | 600mA | 500nA | NPN - Pre-Biased | 280 @ 300mA 5V | 1.15V @ 8mA, 800mA | 2.2 k Ω | 2.2 k Ω | ||||||||||||||||||||||||||||||||||
| PBRN123YK,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pbrn123yt215-datasheets-4573.pdf | TO-236-3, SC-59, SOT-23-3 | PBRN123 | 250mW | 40V | 600mA | 500nA | NPN - Pre-Biased | 500 @ 300mA 5V | 1.15V @ 8mA, 800mA | 2.2 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||
| PDTA114TK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/nexperiausainc-pdta114tt215-datasheets-4033.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | BUILT IN BIAS RESISTOR | 8541.21.00.95 | e3 | TIN | YES | DUAL | GULL WING | 260 | PDTA114 | 3 | 150°C | 40 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | PNP | 250mW | TO-236AB | 50V | 100mA | 1μA | PNP - Pre-Biased | 200 @ 1mA 5V | 150mV @ 500μA, 10mA | 10 k Ω | ||||||||||||||
| PDTA123YS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdta123yt215-datasheets-1220.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTA123 | 500mW | 50V | 100mA | 1μA | PNP - Pre-Biased | 35 @ 5mA 5V | 150mV @ 500μA, 10mA | 2.2 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||
| PDTD123TK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nxpusainc-pdtd123ts126-datasheets-8930.pdf | TO-236-3, SC-59, SOT-23-3 | PDTD123 | SMT3; MPAK | 250mW | 50V | 500mA | 500nA | NPN - Pre-Biased | 100 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 2.2 kOhms | ||||||||||||||||||||||||||||||||||
| PDTA113ZS,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-pdta113zs126-datasheets-8949.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTA113 | 500mW | 50V | 100mA | 1μA | PNP - Pre-Biased | 35 @ 5mA 5V | 150mV @ 500μA, 10mA | 1 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||
| PDTB123YS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtb123yt215-datasheets-5005.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTB123 | TO-92-3 | 500mW | 50V | 500mA | 500nA | PNP - Pre-Biased | 70 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 2.2 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
| PBRN113ZS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/nexperiausainc-pbrn113zt215-datasheets-3027.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PBRN113 | 700mW | 40V | 800mA | 500nA | NPN - Pre-Biased | 500 @ 300mA 5V | 1.15V @ 8mA, 800mA | 1 k Ω | 10 k Ω | ||||||||||||||||||||||||||||||||||
| PDTB113ES,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-pdtb113es126-datasheets-8909.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTB113 | TO-92-3 | 500mW | 50V | 500mA | 500nA | PNP - Pre-Biased | 33 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 1 kOhms | 1 kOhms | |||||||||||||||||||||||||||||||||
| PDTC144WS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtc144wt215-datasheets-1227.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTC144 | 500mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 60 @ 5mA 5V | 150mV @ 500μA, 10mA | 47 k Ω | 22 k Ω | ||||||||||||||||||||||||||||||||||
| PDTC124TK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtc124tt215-datasheets-5306.pdf | TO-236-3, SC-59, SOT-23-3 | PDTC124 | 250mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 100 @ 1mA 5V | 150mV @ 500μA, 10mA | 22 k Ω | |||||||||||||||||||||||||||||||||||
| PBRP113ES,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2012 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PBRP113 | 500mW | 50V | 800mA | PNP - Pre-Biased | 1 k Ω | 1 k Ω | ||||||||||||||||||||||||||||||||||||||
| DTA144ESA-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | /files/microcommercialco-dta144esaap-datasheets-8844.pdf | TO-226-3, TO-92-3 Short Body | NOT SPECIFIED | NOT SPECIFIED | 300mW | 50V | 100mA | 500nA | PNP - Pre-Biased + Diode | 68 @ 5mA 5V | 250MHz | 300mV @ 500μA, 10mA | 47 k Ω | 47 k Ω | ||||||||||||||||||||||||||||||||||
| PDTB123TS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtb123tt215-datasheets-6058.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | unknown | PDTB123 | 500mW | 50V | 500mA | 500nA | PNP - Pre-Biased | 100 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 2.2 k Ω | ||||||||||||||||||||||||||||||||||
| PDTC114ES,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nxpusainc-pdtc114es126-datasheets-8914.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | BUILT-IN BIAS RESISTOR RATIO IS 1 | unknown | 8541.21.00.95 | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | PDTC114 | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 500mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 30 @ 5mA 5V | 150mV @ 500μA, 10mA | 10 k Ω | 10 k Ω | ||||||||||||||
| PDTC124ES,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-pdtc124ek115-datasheets-8896.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | BUILT IN BIAS RESISTOR RATIO IS 1 | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | PDTC124 | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 500mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 60 @ 5mA 5V | 150mV @ 500μA, 10mA | 22 k Ω | 22 k Ω | ||||||||||||||||
| PDTD113ES,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pdtd113et215-datasheets-3248.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTD113 | 500mW | 50V | 500mA | 500nA | NPN - Pre-Biased | 33 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 1 k Ω | 1 k Ω | ||||||||||||||||||||||||||||||||||
| PDTC124XE,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtc124xu115-datasheets-3787.pdf | SC-75, SOT-416 | 3 | EAR99 | BUILT-IN BIAS RESISTOR RATIO IS 2.14 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | PDTC124 | 3 | 150°C | 40 | 1 | BIP General Purpose Small Signal | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 0.15W | 150mW | 50V | 100mA | 0.15W | 0.3 V | 1μA | NPN - Pre-Biased | 80 @ 5mA 5V | 3.5pF | 150mV @ 500μA, 10mA | 22 k Ω | 47 k Ω | |||||||||
| PDTC144WK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdtc144wt215-datasheets-1227.pdf | TO-236-3, SC-59, SOT-23-3 | PDTC144 | 250mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 60 @ 5mA 5V | 150mV @ 500μA, 10mA | 47 k Ω | 22 k Ω | ||||||||||||||||||||||||||||||||||
| PDTC144EK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/nxpusainc-pdtc114es126-datasheets-8914.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | BUILT-IN BIAS RESISTOR RATIO IS 1 | unknown | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | PDTC144 | 3 | NOT SPECIFIED | 1 | BIP General Purpose Small Signal | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 0.25W | 250mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 80 @ 5mA 5V | 150mV @ 500μA, 10mA | 47 k Ω | 47 k Ω | ||||||||||||
| PDTA124XK,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nexperiausainc-pdta124xt215-datasheets-1379.pdf | TO-236-3, SC-59, SOT-23-3 | PDTA124 | SMT3; MPAK | 250mW | 50V | 100mA | 1μA | PNP - Pre-Biased | 80 @ 5mA 5V | 150mV @ 500μA, 10mA | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
| PDTD123TS,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nxpusainc-pdtd123ts126-datasheets-8930.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | PDTD123 | 500mW | 50V | 500mA | 500nA | NPN - Pre-Biased | 100 @ 50mA 5V | 300mV @ 2.5mA, 50mA | 2.2 k Ω | |||||||||||||||||||||||||||||||||||
| PDTC323TK,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-pdtc323tk115-datasheets-8931.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | BUILT-IN BIAS RESISTOR | unknown | YES | DUAL | GULL WING | 3 | 150°C | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 250mW | 15V | 500mA | 500nA | NPN - Pre-Biased | 100 @ 50mA 5V | 80mV @ 2.5mA, 50mA | 2.2 k Ω | ||||||||||||||||||||
| PDTC144ES,126 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/nxpusainc-pdtc114es126-datasheets-8914.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | yes | EAR99 | BUILT IN BIAS RESISTOR RATIO IS 1 | unknown | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | PDTC144 | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN RESISTOR | SWITCHING | NPN | 500mW | 50V | 100mA | 1μA | NPN - Pre-Biased | 80 @ 5mA 5V | 150mV @ 500μA, 10mA | 47 k Ω | 47 k Ω | ||||||||||||||
| PBRN113EK,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-pbrn113ek115-datasheets-8933.pdf | TO-236-3, SC-59, SOT-23-3 | PBRN113 | SMT3; MPAK | 250mW | 40V | 600mA | 500nA | NPN - Pre-Biased | 180 @ 300mA 5V | 1.15V @ 8mA, 800mA | 1 kOhms | 1 kOhms | |||||||||||||||||||||||||||||||||
| RN2107MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-723 | VESM | 150mW | 50V | 100mA | 500nA | PNP - Pre-Biased | 80 @ 10mA 5V | 300mV @ 250μA, 5mA | 10 kOhms | 47 kOhms |
