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ContactBridge Rectifiers(5898)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Breakdown Voltage | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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| GBPC1206 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/onsemiconductor-gbpc3502w-datasheets-9777.pdf | 600V | 12A | 4-Square, GBPC | 180pF | 29mm | 11.23mm | 29mm | Lead Free | 4 | 2 Weeks | 16.74g | No SVHC | 4 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | UL RECOGNIZED | No | UPPER | SOLDER LUG | GBPC1206 | Single | 83.3W | 1 | Bridge Rectifier Diodes | 12A | 12A | 1.1V | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 600V | 300A | Single Phase | 1 | 5μA @ 600V | 1.1V @ 6A | ||||||||||||||||||||||||||||
| GBU806TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 8 Weeks | GBU | Single Phase | 600V | 5μA @ 600V | 1.1V @ 8A | 8A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4M-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/microcommercialco-gbu4jbp-datasheets-0625.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU4M | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 150A | 1 | 4A | 1kV | 5μA @ 1000V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||
| GBJ6005-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-gbj6005f-datasheets-7114.pdf | 50V | 6A | 4-SIP, GBJ | 55pF | 30.3mm | 24.5mm | 4.8mm | Exempt | 4 | 9 Weeks | No SVHC | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 6A | 6A | 1V | 170A | ISOLATED | SILICON | 5μA | 50V | 170A | Single Phase | 1 | 35V | 5μA @ 50V | 1V @ 3A | ||||||||||||||||||||||||||||||
| GBL10-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbl01e345-datasheets-1437.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 5μA | 1kV | 150A | Single Phase | 4A | 1 | 3A | 5μA @ 1000V | 1.1V @ 4A | 3A | ||||||||||||||||||||||||||||||||||
| GBU4K-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/microcommercialco-gbu4jbp-datasheets-0625.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU4K | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 150A | 1 | 4A | 800V | 5μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||
| GBU4A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2013 | 50V | 4A | 4-SIP, GBU | 200pF | 22.3mm | 18.8mm | 3.56mm | Lead Free | 10 Weeks | 5.4g | 4 | ACTIVE (Last Updated: 1 day ago) | No | GBU4A | Single | 8W | 1 | GBU | 4A | 4A | 1V | 150A | 5μA | 150A | 5μA | 50V | 150A | Single Phase | 50V | 5μA @ 50V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||
| GBU4B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2013 | 100V | 4A | 4-SIP, GBU | 200pF | 22.3mm | 18.8mm | 3.56mm | Lead Free | 10 Weeks | 5.4g | No SVHC | 4 | ACTIVE (Last Updated: 1 day ago) | No | GBU4B | Single | 8W | 1 | GBU | 4A | 4A | 1V | 150A | 5μA | 150A | 5μA | 100V | 150A | Single Phase | 3A | 100V | 5μA @ 100V | 1V @ 4A | 4A | ||||||||||||||||||||||||||||||||
| GBJ1510TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 8 Weeks | GBJ | Single Phase | 1kV | 10μA @ 1000V | 1.1V @ 7.5A | 15A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4D-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/microcommercialco-gbu4jbp-datasheets-0625.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU4D | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 200V | Single Phase | 150A | 1 | 4A | 200V | 5μA @ 200V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||
| B80C1500G-E4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-b250c1500ge451-datasheets-0769.pdf | 4-Circular, WOG | 9.86mm | 5.6mm | 8.84mm | 4 | 8 Weeks | 4 | yes | EAR99 | Silver | No | e4 | BOTTOM | WIRE | 4 | Single | 1 | Bridge Rectifier Diodes | 1.6A | 1V | 50A | 10μA | ISOLATED | SILICON | 50A | 10μA | 125V | 50A | Single Phase | 1 | 10μA @ 125V | 1V @ 1A | 1.5A | ||||||||||||||||||||||||||||||||||
| KBP310G-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/microcommercialco-kbp310gbp-datasheets-7146.pdf | 4-SIP, GBP | 4 | 18 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | 1000V | Single Phase | 80A | 1 | 3A | 1kV | 10μA @ 1000V | 1.1V @ 1A | 3A | ||||||||||||||||||||||||||||||||||||||||
| GBL06-E3/45 | Vishay Semiconductor Diodes Division | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-gbl01e345-datasheets-1437.pdf | 4-SIP, GBL | 20.9mm | 10.7mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 5μA | 600V | 150A | Single Phase | 4A | 1 | 3A | 5μA @ 600V | 1.1V @ 4A | 3A | |||||||||||||||||||||||||||||||||
| GBU6J | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | GBU | 6A | 175A | 5μA | 5A | 600V | Single Phase | 600V | 5μA @ 600V | 1.1V @ 6A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Standard | ROHS3 Compliant | 2013 | 400V | 4A | 4-SIP, GBU | 200pF | 22.3mm | 18.8mm | 3.56mm | Lead Free | 10 Weeks | 5.4g | No SVHC | 4 | ACTIVE (Last Updated: 1 day ago) | No | GBU4G | Single | 8W | 1 | GBU | 4A | 4A | 1V | 150A | 5μA | 150A | 5μA | 400V | 150A | Single Phase | 400V | 5μA @ 400V | 1V @ 4A | 4A | |||||||||||||||||||||||||||||||||
| TS15P06G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts15p06gd2g-datasheets-7161.pdf | 4-SIP, TS-6P | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | MATTE TIN | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 240A | 1 | 15A | 800V | 10μA @ 800V | 1.1V @ 15A | 15A | ||||||||||||||||||||||||||||||||||||||||||||
| GBL08 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-gbl06d2g-datasheets-7038.pdf | 4-SIP, GBL | 10 Weeks | GBL | Single Phase | 800V | 5μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBU8D-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbu8de351-datasheets-7168.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU8D | 4 | Single | 1 | Bridge Rectifier Diodes | 8A | 1V | 200A | 5μA | ISOLATED | SILICON | 5μA | 200V | 200A | Single Phase | 8A | 1 | 3.9A | 5μA @ 200V | 1V @ 8A | 3.9A | ||||||||||||||||||||||||||||||||
| GBU802 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | Standard | ROHS3 Compliant | 2006 | /files/diodesincorporated-gbu806-datasheets-0730.pdf | 200V | 8A | 4-SIP, GBU | 130pF | 22.3mm | 18.8mm | 3.56mm | Exempt | 4 | 9 Weeks | 3.404012g | 4 | no | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 260 | GBU802 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 8A | 8A | 1V | 200A | ISOLATED | SILICON | 5μA | 200V | 200A | Single Phase | 1 | 140V | 5μA @ 200V | 1V @ 4A | |||||||||||||||||||||||||||
| TS20P05G D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts20p05gd2g-datasheets-7179.pdf | 4-SIP, TS-6P | 10 Weeks | TS-6P | Single Phase | 600V | 10μA @ 600V | 1.1V @ 20A | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DF01M-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-df005me345-datasheets-0587.pdf | 1A | 4-EDIP (0.300, 7.62mm) | 8.51mm | 3.3mm | 6.5mm | Lead Free | 4 | 8 Weeks | Unknown | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | DF01 | 4 | Single | 1 | Bridge Rectifier Diodes | 1A | 1.1V | 50A | 5μA | 100V | SILICON | 5μA | 100V | 50A | Single Phase | 1.5A | 1 | 1A | 5μA @ 100V | 1.1V @ 1A | ||||||||||||||||||||||||||||||
| GBL06 D2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-gbl06d2g-datasheets-7038.pdf | 4-SIP, GBL | 4 | 10 Weeks | EAR99 | UL RECOGNIZED | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | R-PSIP-T4 | BRIDGE, 4 ELEMENTS | ISOLATED | SILICON | 600V | Single Phase | 150A | 1 | 3A | 600V | 5μA @ 600V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||
| B80C800DM-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~125°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-b80c800dme345-datasheets-7041.pdf | 4-EDIP (0.300, 7.62mm) | 8.51mm | 3.3mm | 6.5mm | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | Tin | No | e3 | DUAL | 4 | Single | 1 | Bridge Rectifier Diodes | 900mA | 1V | 45A | 10μA | SILICON | 45A | 10μA | 125V | 45A | Single Phase | 1 | 0.9A | 10μA @ 125V | 1V @ 900mA | |||||||||||||||||||||||||||||||||||
| DB106-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/microcommercialco-db104bp-datasheets-0539.pdf | 4-EDIP (0.321, 8.15mm) | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | DUAL | NOT SPECIFIED | DB106 | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PDIP-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 50A | 1 | 1A | 800V | 10μA @ 800V | 1.1V @ 1A | 1A | ||||||||||||||||||||||||||||||||||||||
| GBU410GTB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 8 Weeks | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| B380C1500G-E4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-b250c1500ge451-datasheets-0769.pdf | 4-Circular, WOG | 9.86mm | 5.6mm | 8.84mm | Lead Free | 4 | 8 Weeks | 4 | yes | Silver | No | e4 | BOTTOM | WIRE | 4 | Single | 1 | Bridge Rectifier Diodes | 1.6A | 1V | 50A | 10μA | ISOLATED | SILICON | 50A | 10μA | 600V | 50A | Single Phase | 1.5A | 1 | 10μA @ 600V | 1V @ 1.5A | |||||||||||||||||||||||||||||||||||
| B250C800G-E4/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~125°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-b40c800ge451-datasheets-0928.pdf | 4-Circular, WOG | 9.86mm | 5.6mm | 8.84mm | 4 | 8 Weeks | 4 | yes | EAR99 | No | e4 | SILVER | BOTTOM | WIRE | 4 | Single | 1 | Bridge Rectifier Diodes | 900mA | 1V | 45A | 10μA | ISOLATED | SILICON | 45A | 10μA | 400V | 45A | Single Phase | 1 | 0.9A | 10μA @ 400V | 1V @ 900mA | ||||||||||||||||||||||||||||||||||
| GBU6G-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2005 | /files/microcommercialco-gbu6mbp-datasheets-0635.pdf | 4-SIP, GBU | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | GBU6G | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | 400V | Single Phase | 175A | 1 | 6A | 400V | 5μA @ 400V | 1V @ 3A | 6A | ||||||||||||||||||||||||||||||||||||||
| UR4KB80 C2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | 4-ESIP | 5 Weeks | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | BRIDGE, 4 ELEMENTS | Single Phase | 135A | 4A | 800V | 10μA @ 800V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MB2S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-mb4se380-datasheets-9274.pdf | TO-269AA, 4-BESOP | 13pF | 4.95mm | 2.7mm | 4.1mm | Lead Free | 4 | 8 Weeks | Unknown | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 250 | MB2 | 4 | Single | 40 | 1 | Bridge Rectifier Diodes | 500mA | 500mA | 1V | 35A | 5μA | SILICON | 5μA | 200V | 35A | Single Phase | 500mA | 1 | 5μA @ 200V | 1V @ 400mA |
