Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Voltage - Rated AC | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Output Current | Forward Current | Forward Voltage | Isolation Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Diode Element Material | Breakdown Voltage-Min | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Type | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Peak Reverse (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
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GBU4A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | Standard | RoHS Compliant | 2017 | 4-SIP, GBU | 4 Weeks | PRODUCTION (Last Updated: 6 months ago) | GBU | 4A | 150A | 5μA | 5A | 50V | Single Phase | 50V | 5μA @ 50V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBU6D-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-gbu6me345-datasheets-7734.pdf | 4-SIP, GBU | 211pF | 22.3mm | 18.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | Unknown | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU6D | 4 | Single | 1 | Bridge Rectifier Diodes | 6A | 6A | 1V | 175A | 5μA | ISOLATED | SILICON | 5μA | 200V | 175A | Single Phase | 1 | 5μA @ 200V | 1V @ 3A | 3.8A | |||||||||||||||||||||||||||||||||||
TS4K60 D3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts4k60d3g-datasheets-0135.pdf | 4-SIP, GBL | 10 Weeks | TS4K | Single Phase | 600V | 10μA @ 600V | 1V @ 2A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BU2506-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | Unknown | 4 | yes | UL RECOGNIZED | Tin | No | e3 | 4 | Single | 1 | Bridge Rectifier Diodes | 25A | 1.05V | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 600V | 300A | Single Phase | 1 | 3.5A | 5μA @ 600V | 1.05V @ 12.5A | 3.5A | ||||||||||||||||||||||||||||||||||||||
B483C-2T | Sensata-Crydom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | QC Terminal | -40°C~125°C TJ | Bulk | Not Applicable | 125°C | -40°C | Standard | RoHS Compliant | 2009 | /files/sensatacrydom-b483c2t-datasheets-0141.pdf | 240V | 35A | B48 Module | Lead Free | 6 Weeks | 4 | Single | 1 | 50A | 1.35V | 600V | Single Phase | 600V | 1.35V @ 50A | 35A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBJ2010TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 8 Weeks | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 20A | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBJ606TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 8 Weeks | Single Phase | 600V | 5μA @ 600V | 1.1V @ 6A | 6A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MP506W-BP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -50°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 1996 | /files/microcommercialco-mp504wbp-datasheets-1040.pdf | 4-Square, MP-50W | 4 | 12 Weeks | yes | EAR99 | UL RECOGNIZED | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | UPPER | WIRE | NOT SPECIFIED | MP506 | 4 | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | S-PUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 600V | Single Phase | 400A | 1 | 50A | 600V | 10μA @ 600V | 1.2V @ 25A | 50A | ||||||||||||||||||||||||||||||||||||||||
BU20065S-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-ESIP, BU-5S | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 4 | Bridge Rectifier Diodes | Not Qualified | 3.5A | 240A | 5μA | ISOLATED | SILICON | 240A | 5μA | 600V | Single Phase | 1 | 5μA @ 600V | 1.05V @ 10A | ||||||||||||||||||||||||||||||||||||||||
BU2010-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-bu2006e345-datasheets-7295.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | Unknown | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 20A | 1.05V | 240A | 5μA | ISOLATED | SILICON | 5μA | 1kV | 240A | Single Phase | 20A | 1 | 3.5A | 5μA @ 1000V | 1.05V @ 10A | 3.5A | |||||||||||||||||||||||||||||||||||||
TS10K80 D3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-ts10k80d3g-datasheets-0104.pdf | 4-SIP, GBL | 3 | 10 Weeks | EAR99 | UL RECOGNIZED | e3 | Matte Tin (Sn) | NO | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSFM-T3 | BRIDGE, 4 ELEMENTS | SILICON | 800V | Single Phase | 150A | 1 | 10A | 800V | 10μA @ 800V | 1V @ 2A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||
BU1008A-M3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-bu1008am345-datasheets-0159.pdf | 4-SIP, BU | 4 | 10 Weeks | UL RECOGNIZED | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PSFM-T4 | BRIDGE, 4 ELEMENTS | SILICON | Single Phase | 90A | 1 | 3A | 800V | 5μA @ 800V | 1.1V @ 5A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||
GBJ1010TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-ESIP | 8 Weeks | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 10A | 10A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VUO52-16NO1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/ixys-vuo5216no1-datasheets-0109.pdf | 600V | 54A | V1-A | 63mm | 17mm | 31.6mm | Lead Free | 7 | 20 Weeks | No SVHC | 5 | yes | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | VUO52 | 7 | Single | 95W | 1 | Bridge Rectifier Diodes | R-XUFM-X7 | 55A | 55A | 1.44V | 350A | 1.5mA | ISOLATED | SILICON | 375A | 300μA | 1.6kV | 380A | Three Phase | 55A | 3 | 40μA @ 1600V | 1.13V @ 20A | ||||||||||||||||||||||||||||||
VS-GBPC3502A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vsgbpc3506a-datasheets-1016.pdf | 4-Square, GBPC-A | 28.6mm | 7.7mm | 28.6mm | 140V | 4 | 28 Weeks | 14.999988g | Unknown | 4 | EAR99 | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | SOLDER LUG | GBPC3502 | Single | 4 | 35A | 1.1V | 2.7kV | 500A | ISOLATED | SILICON | 500A | 5μA | 200V | Single Phase | 1 | 2mA @ 200V | |||||||||||||||||||||||||||||||||||||||
VS-2KBB10R | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | Standard | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-vs2kbb20r-datasheets-9830.pdf | 4-SIP, 2KBB | 17.5mm | 15mm | 6.5mm | 4 | 14 Weeks | Unknown | 4 | EAR99 | No | WIRE | Single | 1 | 1.9A | 1.1V | 52A | 10μA | SILICON | 52A | 10μA | 100V | 52A | Single Phase | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||
GBU8G | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 31 | Right Angle | 80mOhm | GBU | 600μm | 8A | 200A | 5μA | 5A | 400V | Single Phase | 400V | 5μA @ 400V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||
BU2508-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-bu2506e351-datasheets-7721.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | Unknown | 4 | yes | UL RECOGNIZED | Tin | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 25A | 1.05V | 300A | 5μA | ISOLATED | SILICON | 300A | 5μA | 800V | 300A | Single Phase | 25A | 1 | 3.5A | 5μA @ 600V | 1.05V @ 12.5A | 3.5A | ||||||||||||||||||||||||||||||||||
GSIB2540-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-gsib2560e345-datasheets-1009.pdf | 4-SIP, GSIB-5S | 30mm | 20mm | 4.6mm | Lead Free | 4 | 10 Weeks | Unknown | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | 4 | Single | 1 | Bridge Rectifier Diodes | 25A | 1V | 350mA | 10μA | ISOLATED | SILICON | 10μA | 400V | 350A | Single Phase | 25A | 1 | 3.5A | 10μA @ 400V | 1V @ 12.5A | 3.5A | |||||||||||||||||||||||||||||||||||||
UG4KB60TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | 4-ESIP | 8 Weeks | Single Phase | 600V | 5μA @ 600V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBU8B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Solder | 150°C | -55°C | Standard | RoHS Compliant | 2010 | 4-SIP, GBU | 4 Weeks | 4 | PRODUCTION (Last Updated: 6 months ago) | 25 | Right Angle | 80mOhm | GBU | 600μm | 8A | 200A | 5μA | 5A | 100V | Single Phase | 100V | 5μA @ 100V | 1.1V @ 8A | 8A | ||||||||||||||||||||||||||||||||||||||||||||||||||
GBU8G-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-gbu8de351-datasheets-7168.pdf | 4-SIP, GBU | 211pF | 22.3mm | 18.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | Unknown | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU8G | 4 | Single | 1 | Bridge Rectifier Diodes | 8A | 8A | 1V | 200A | 5μA | ISOLATED | SILICON | 5μA | 400V | 200A | Single Phase | 8A | 1 | 5μA @ 400V | 1V @ 8A | 3.9A | |||||||||||||||||||||||||||||||||||
GBPC2506WTA | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | 4-Square, GBPC-W | 8 Weeks | Single Phase | 600V | 5μA @ 600V | 1.1V @ 12.5A | 25A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BU1006-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bu1006e345-datasheets-0093.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | BU1006 | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 3.2A | 1.05V | 120A | 5μA | ISOLATED | SILICON | 120A | 5μA | 600V | 120A | Single Phase | 1 | 5μA @ 600V | 1.05V @ 5A | |||||||||||||||||||||||||||||||||||||
BR1001SG-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/comchiptechnology-br1010sgg-datasheets-9709.pdf | 4-Square, BR-8 | 4 | 10 Weeks | yes | UL RECOGNIZED | UPPER | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | R-XUFM-W4 | BRIDGE, 4 ELEMENTS | SILICON | 100V | Single Phase | 175A | 1 | 10A | 100V | 10μA @ 100V | 1.1V @ 5A | 10A | |||||||||||||||||||||||||||||||||||||||||||||||||
BU1208-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-bu1206e345-datasheets-9901.pdf | 4-SIP, BU | 22.3mm | 18.8mm | 4.1mm | Lead Free | 4 | 10 Weeks | 4 | yes | UL RECOGNIZED | Tin | unknown | e3 | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Bridge Rectifier Diodes | Not Qualified | 12A | 1.05V | 150A | 5μA | ISOLATED | SILICON | 150A | 5μA | 800V | 150A | Single Phase | 12A | 1 | 5μA @ 800V | 1.05V @ 6A | 3.4A | |||||||||||||||||||||||||||||||||||
GBU4B-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbu4ge351-datasheets-7288.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | EAR99 | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU4B | 4 | Single | 1 | Bridge Rectifier Diodes | 4A | 1V | 150A | 5μA | ISOLATED | SILICON | 150A | 5μA | 100V | 150A | Single Phase | 4A | 1 | 3A | 5μA @ 100V | 1V @ 4A | 3A | |||||||||||||||||||||||||||||||||||
UG4KB100TB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | 4-ESIP | 8 Weeks | Single Phase | 1kV | 5μA @ 1000V | 1.1V @ 4A | 4A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GBU8J-E3/51 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tray | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gbu8de351-datasheets-7168.pdf | 4-SIP, GBU | 22.3mm | 18.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | 4 | yes | UL RECOGNIZED | No | e3 | Matte Tin (Sn) | GBU8J | 4 | Single | 1 | Bridge Rectifier Diodes | 8A | 1V | 200A | 5μA | ISOLATED | SILICON | 200A | 5μA | 600V | 200A | Single Phase | 8A | 1 | 3.9A | 5μA @ 600V | 1V @ 8A | 3.9A | ||||||||||||||||||||||||||||||||||||
VS-26MT140 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | QC Terminal | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs36mt160-datasheets-9903.pdf | 5-Square, D-63 | 28.5mm | 10mm | 28.5mm | 5 | 12 Weeks | Unknown | 5 | UL RECOGNIZED | No | e4 | GOLD | UPPER | SOLDER LUG | Single | 1 | 25A | 1.26V | 375A | 200μA | ISOLATED | SILICON | 2mA | 1.4kV | 375A | Three Phase | 3 | 100μA @ 1400V |
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