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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Thickness | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Memory Size | Memory Type | Data Bus Width | Frequency (Max) | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Organization | Memory Width | Memory Density | Parallel/Serial | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min | Memory IC Type | Access Mode |
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| 71342LA35PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71342la35pf8-datasheets-8785.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 64 | 7 Weeks | 5.5V | 4.5V | 64 | Parallel | 32 kb | no | 1.4mm | 2 | EAR99 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.8mm | 64 | COMMERCIAL | 20 | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 35 ns | 24b | 4KX8 | 0.0015A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||
| 70914S12PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 62.5MHz | 1.6mm | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70914s12pf8-datasheets-8782.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 80 | 7 Weeks | 5.5V | 4.5V | 80 | Parallel | 36 kb | no | 1.4mm | 2 | EAR99 | AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE; SELF TIMED WRITE | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.65mm | 80 | COMMERCIAL | 20 | SRAMs | 5V | Not Qualified | 4.5kB | RAM, SDR, SRAM | 3-STATE | 12 ns | 24b | 4KX9 | 0.015A | 9b | Synchronous | COMMON | |||||||||||||||||||||||||||||
| 70914S12PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 62.5MHz | 1.6mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70914s12pf-datasheets-8744.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 80 | 7 Weeks | 5.5V | 4.5V | 80 | Parallel | 36 kb | no | 1.4mm | 2 | EAR99 | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.65mm | 80 | COMMERCIAL | 20 | SRAMs | 5V | Not Qualified | 4.5kB | RAM, SDR, SRAM | 3-STATE | 12 ns | 24b | 4KX9 | 0.015A | 9b | Synchronous | COMMON | ||||||||||||||||||||||||||||||
| 70T3589S133BCI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 85°C | -40°C | 133MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70t3589s133bci-datasheets-8729.pdf | 17mm | 17mm | 2.5V | Contains Lead | 7 Weeks | 2.6V | 2.4V | 256 | Parallel | 2.3 Mb | 1.4mm | 2 | No | 450mA | RAM, SRAM | 15 ns | 32b | 36b | Synchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29VS256RABBHI010 | Cypress Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | 108MHz | 1mm | RoHS Compliant | FBGA | 7.7mm | 1.8V | 44 | 1.95V | 1.7V | 44 | Parallel, Serial | 256 Mb | 3A991.B.1.A | BOTTOM BOOT BLOCK | No | 8542.32.00.51 | 1 | 60mA | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 1.8V | 0.5mm | INDUSTRIAL | 40 | 32MB | FLASH, NOR | 16b | 108MHz | 80 ns | 24b | 32MX8 | 8 | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||
| IDT71V65603S150PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | CMOS | 150MHz | SYNCHRONOUS | 1.6mm | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v65603s150pf8-datasheets-8708.pdf | LQFP | 20mm | 14mm | 100 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 3.3V | 0.65mm | 100 | COMMERCIAL | 3.465V | 3.135V | 20 | SRAMs | 3.3V | 0.325mA | Not Qualified | R-PQFP-G100 | RAM, SRAM | 3-STATE | 256KX36 | 36 | 9437184 bit | 0.04A | 3.8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||
| 6116LA20TDB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | CMOS | 5.08mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-6116la20tdb-datasheets-8698.pdf | CDIP | 32.51mm | 7.62mm | 5V | Contains Lead | 24 | 5.5V | 4.5V | 24 | Parallel | 16 kb | no | 3.56mm | 1 | No | 1 | 120mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 2.54mm | 24 | MILITARY | SRAMs | 5V | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 3-STATE | 20 ns | 11b | 2KX8 | 0.0003A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||||||
| 7016S15PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7016s15pf8-datasheets-8688.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 80 | 7 Weeks | 5.5V | 4.5V | 80 | Parallel | 144 kb | no | 1.4mm | 2 | EAR99 | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | No | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.65mm | 80 | COMMERCIAL | 20 | SRAMs | 5V | 18kB | RAM, SDR, SRAM | 3-STATE | 15 ns | 14b | 16KX9 | 0.015A | 9b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||
| IDT71V2556S166PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | CMOS | 166MHz | SYNCHRONOUS | 1.6mm | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v2556s166pf8-datasheets-8689.pdf | LQFP | 20mm | 14mm | 100 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 3.3V | 0.65mm | 100 | INDUSTRIAL | 3.465V | 3.135V | 20 | SRAMs | 2.53.3V | 0.35mA | Not Qualified | R-PQFP-G100 | RAM, SRAM | 3-STATE | 128KX36 | 36 | 4718592 bit | 0.04A | 3.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||
| IDT71V67803S150PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | 150MHz | SYNCHRONOUS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v67803s150pf-datasheets-8680.pdf | LQFP | 20mm | 14mm | 100 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 3.3V | 0.65mm | 100 | COMMERCIAL | 3.465V | 3.135V | 20 | SRAMs | 3.3V | 0.305mA | Not Qualified | R-PQFP-G100 | RAM, SRAM | 3-STATE | 512KX18 | 18 | 9437184 bit | 0.05A | 3.8 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||
| W97AH6KBQX2E | Winbond Electronics Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | 85°C | -25°C | CMOS | 400MHz | SYNCHRONOUS | 0.8mm | RoHS Compliant | 12mm | 12mm | 168 | 168 | Parallel | 1 | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | BOTTOM | BALL | 1.2V | 0.5mm | 1.3V | 1.14V | RAM, SDRAM | 64MX16 | 16 | 1073741824 bit | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71321SA25J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71321sa25j-datasheets-8656.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 16 kb | 3.63mm | 2 | No | 220mA | 2kB | RAM, SDR, SRAM | 25 ns | 22b | 8b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TH58NYG3S0HBAI6 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CMOS | ASYNCHRONOUS | 1mm | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-th58nyg3s0hbai6-datasheets-8651.pdf | 8mm | 6.5mm | 67 | 1 | YES | BOTTOM | BALL | 1.8V | 0.8mm | INDUSTRIAL | 85°C | -40°C | 1.95V | 1.7V | R-PBGA-B67 | 3V | 1GX8 | 8 | 8589934592 bit | PARALLEL | EEPROM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7025L20PFI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | 1.6mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7025l20pfi-datasheets-8637.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 100 | 7 Weeks | 5.5V | 4.5V | 100 | Parallel | 128 kb | no | 1.4mm | 2 | EAR99 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 1 | 320mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.5mm | 100 | INDUSTRIAL | 20 | SRAMs | 5V | Not Qualified | 16kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 26b | 8KX16 | 0.004A | 16b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||
| 71V67603S133BGGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 85°C | -40°C | CMOS | 133MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67603s133bggi8-datasheets-8633.pdf | BGA | 14mm | 2.15mm | 22mm | 3.3V | Lead Free | 280mA | 119 | 7 Weeks | 3.465V | 3.135V | 119 | Parallel | 9 Mb | yes | 2.15mm | 1 | PIPELINED ARCHITECTURE | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 3.3V | 119 | INDUSTRIAL | 30 | SRAMs | 1.1MB | RAM, SDR, SRAM | 133MHz | 3-STATE | 4.2 ns | 18b | 256KX36 | 0.07A | COMMON | |||||||||||||||||||||||||||||||||
| IDT71V67603S133PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | CMOS | 133MHz | SYNCHRONOUS | 1.6mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v67603s133pf8-datasheets-8614.pdf | LQFP | 20mm | 14mm | 100 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 3.3V | 0.65mm | 100 | COMMERCIAL | 3.465V | 3.135V | 20 | SRAMs | 3.3V | 0.26mA | Not Qualified | R-PQFP-G100 | RAM, SRAM | 3-STATE | 256KX36 | 36 | 9437184 bit | 0.05A | 4.2 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||
| IDT71024S12TYI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | 3.76mm | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71024s12tyi-datasheets-8617.pdf | 20.96mm | 7.62mm | 32 | 32 | Parallel | 3A991.B.2.B | not_compliant | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | DUAL | J BEND | 225 | 5V | 1.27mm | 32 | INDUSTRIAL | 5.5V | 4.5V | 30 | SRAMs | 5V | 0.16mA | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 128KX8 | 8 | 1048576 bit | 0.01A | 12 ns | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||
| 70V9159L9PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v9159l9pf-datasheets-8607.pdf | LQFP | 14mm | 14mm | 3.3V | Contains Lead | 100 | 7 Weeks | 100 | Parallel | 72 kb | no | 1.4mm | 2 | EAR99 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 3.3V | 0.5mm | 100 | COMMERCIAL | 3.6V | 3V | 20 | SRAMs | RAM, SRAM | 3-STATE | 66.7MHz | 26b | 8KX9 | 0.003A | 9 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||
| IDT71V3556S133PFI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | 133MHz | SYNCHRONOUS | 1.6mm | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3556s133pfi-datasheets-8593.pdf | LQFP | 20mm | 14mm | 100 | Parallel | 3A991.B.2.A | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 3.3V | 0.65mm | 100 | INDUSTRIAL | 3.465V | 3.135V | 20 | SRAMs | 3.3V | 0.31mA | Not Qualified | R-PQFP-G100 | RAM, SRAM | 3-STATE | 128KX36 | 36 | 4718592 bit | 0.045A | 4.2 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||
| 7134LA25J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7134la25j8-datasheets-8588.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 32 kb | no | 3.63mm | 2 | EAR99 | AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 25 ns | 24b | 4KX8 | 0.0015A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||||
| 71321LA35PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71321la35pf-datasheets-8582.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 64 | 7 Weeks | 5.5V | 4.5V | 64 | Parallel | 16 kb | no | 1.4mm | 2 | EAR99 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 120mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.8mm | 64 | COMMERCIAL | 20 | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 35 ns | 11b | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||||||||||
| 71V321S55J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v321s55j-datasheets-8566.pdf | PLCC | 19mm | 19mm | 3.3V | Contains Lead | 52 | 7 Weeks | 3.6V | 3V | 52 | Parallel | 16 kb | no | 3.63mm | 2 | EAR99 | No | 1 | 115mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 2kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 22b | 0.005A | 8b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||||||||||||
| 7134LA25JI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | 4.57mm | RoHS Compliant | 2005 | /files/integrateddevicetechnology-7134la25ji-datasheets-8564.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 32 kb | no | 3.63mm | 2 | EAR99 | No | 1 | 260mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | INDUSTRIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 25 ns | 24b | 4KX8 | 0.004A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||||||||||||
| 71T75802S150BGGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | 150MHz | 2.36mm | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71t75802s150bggi8-datasheets-8537.pdf | BGA | 14mm | 22mm | 2.5V | Lead Free | 119 | 8 Weeks | 119 | Parallel | 18 Mb | yes | 2.15mm | 1 | PIPELINED ARCHITECTURE | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 2.5V | 119 | INDUSTRIAL | 2.625V | 2.375V | SRAMs | 0.235mA | RAM, SRAM | 3-STATE | 20b | 0.06A | 3.8 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||
| 71T75802S150BGGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 85°C | -40°C | CMOS | 150MHz | 2.36mm | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71t75802s150bggi-datasheets-8523.pdf | BGA | 14mm | 22mm | 2.5V | Lead Free | 119 | 8 Weeks | 119 | Parallel | 18 Mb | yes | 2.15mm | 1 | PIPELINED ARCHITECTURE | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 2.5V | 119 | INDUSTRIAL | 2.625V | 2.375V | 30 | SRAMs | 0.235mA | RAM, SRAM | 3-STATE | 20b | 0.06A | 3.8 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||
| 71T75902S85BG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 91MHz | 2.36mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71t75902s85bg-datasheets-8521.pdf | BGA | 14mm | 22mm | 2.5V | Contains Lead | 119 | 8 Weeks | 2.625V | 2.375V | 119 | Parallel | 18 Mb | no | 2.15mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | 225mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 119 | COMMERCIAL | 20 | SRAMs | 2.3MB | RAM, SDR, SRAM | 100MHz | 3-STATE | 8.5 ns | 20b | 0.04A | 18b | Synchronous | COMMON | 2.38V | |||||||||||||||||||||||||||||||
| 70V24S20J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v24s20j8-datasheets-8497.pdf | PLCC | 29.21mm | 29.21mm | 3.3V | Contains Lead | 7 Weeks | 3.6V | 3V | 84 | Parallel | 64 kb | 3.63mm | 2 | No | 200mA | 8kB | RAM, SDR, SRAM | 20 ns | 24b | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA20DB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 125°C | -55°C | 4.826mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-6116sa20db-datasheets-8493.pdf | CDIP | 32mm | 15.24mm | 5V | Contains Lead | 24 | 5.5V | 4.5V | 24 | Parallel | 16 kb | no | 2.9mm | 1 | No | 1 | 130mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 2.54mm | 24 | MILITARY | SRAMs | 5V | MIL-STD-883 Class B | 2kB | CMOS, RAM, SRAM - Asynchronous | 3-STATE | 20 ns | 11b | 2KX8 | 8b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||
| IDT71V3557SA75BG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 100MHz | 2.36mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3557sa75bg-datasheets-8480.pdf | BGA | 22mm | 3.3V | 119 | 3.465V | 3.135V | 119 | Parallel | 4.5 Mb | 1 | FLOW-THROUGH ARCHITECTURE | not_compliant | 1 | 275mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | 119 | COMMERCIAL | NOT SPECIFIED | SRAMs | Not Qualified | RAM, SRAM | 3-STATE | 7.5 ns | 17b | 36 | 0.04A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||||
| 7025S45PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7025s45pf-datasheets-8474.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 100 | Parallel | 128 kb | 1.4mm | 2 | No | 16kB | RAM, SDR, SRAM | 45 ns | 26b | 16b | Asynchronous |
