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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | Page Size | I/O Type | Standby Voltage-Min | Memory IC Type | Mixed Memory Type |
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| IS61LV6416-10BI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | RoHS Compliant | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is61lv641610bi-datasheets-4298.pdf | 48-TFBGA | 8mm | 3.3V | 48 | 48 | 1 Mb | no | 1 | LOW POWER STANDBY MODE | No | 1 | e0 | Tin/Lead (Sn/Pb) | YES | 3.135V~3.63V | BOTTOM | 3.3V | 0.75mm | 48 | 3.63V | 1Mb 64K x 16 | Volatile | 3-STATE | 16b | SRAM | Parallel | 16 | 10ns | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
| IS61WV12824-8BI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 3.5mm | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is61wv128248bi-datasheets-4249.pdf | 119-BBGA | 22mm | 14mm | 119 | 8542.32.00.41 | 1 | YES | 3.135V~3.465V | BOTTOM | 3.3V | 1.27mm | 3.465V | 3.135V | R-PBGA-B119 | 3Mb 128K x 24 | Volatile | SRAM | Parallel | 128KX24 | 24 | 8ns | 3145728 bit | 8 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99GL032N90TFI030 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS2432P-W0F+1 | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S71VS256RC0AHK4L0 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 85°C | -25°C | CMOS | 1mm | ROHS3 Compliant | 2012 | 7.7mm | 6.2mm | 1.8V | 56 | 18 Weeks | 56 | 3A991.B.1.A | PSRAM IS ORGANIZED AS 4M X 16 | No | 8542.32.00.71 | 1 | YES | BOTTOM | BALL | 1.8V | 0.5mm | OTHER | 1.95V | 1.7V | Other Memory ICs | 16MX16 | 16 | MEMORY CIRCUIT | FLASH+PSRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99AL016J70TFI023 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99GL064N90TFI020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99GL512S10TFI010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99GL256P11TFI020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S99AL016J70TFI010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S71VS256RC0AHK4L3 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | CMOS | SYNCHRONOUS | 1mm | ROHS3 Compliant | 7.7mm | 6.2mm | 56 | 12 Weeks | 3A991.B.1.A | PSRAM IS ORGANIZED AS 4M X 16 | 8542.32.00.71 | 1 | YES | BOTTOM | BALL | 1.8V | 0.5mm | OTHER | 85°C | -25°C | 1.95V | 1.7V | Other Memory ICs | 1.8V | Not Qualified | R-PBGA-B56 | 16MX16 | 16 | 268435456 bit | MEMORY CIRCUIT | FLASH+PSRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 520366231286 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | ROHS3 Compliant | 15 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LF51236B-7.5B3I | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.2mm | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is61lf51236b75b3i-datasheets-4255.pdf | 165-TBGA | 15mm | 13mm | 165 | 1 | YES | 3.135V~3.465V | BOTTOM | 3.3V | 1mm | 3.465V | 3.135V | R-PBGA-B165 | 18Mb 512K x 36 | Volatile | 7.5ns | 117MHz | SRAM | Parallel | 512KX36 | 36 | 18874368 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LV12824-8BI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | RoHS Compliant | 119-BGA | 22mm | 3.3V | 119 | 119 | 3 Mb | no | 1 | No | 1 | 240mA | e0 | Tin/Lead (Sn/Pb) | YES | 3.135V~3.63V | BOTTOM | 3.3V | 119 | 3.63V | 3Mb 128K x 24 | Volatile | 3-STATE | 17b | SRAM | Parallel | 24 | 8ns | 0.02A | 24b | 8 ns | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||||||||||||||
| MTFC8GAMALNA-AIT ES TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | FLASH - NAND | 100-TBGA | 64Gb 8G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32800J-6BI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | 90-TFBGA | 13mm | 8mm | 90 | 1 | AUTO/SELF REFRESH | 1 | YES | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 3.6V | 3V | R-PBGA-B90 | 256Mb 8M x 32 | Volatile | 5.4ns | 166MHz | DRAM | Parallel | 8MX32 | 32 | 268435456 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F256G08CMCGBJ4-37R:G TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 2.7V~3.6V | 256Gb 32G x 8 | Non-Volatile | 267MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPS12836EC-200B3I | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.2mm | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is61lps12836ec200b3i-datasheets-4227.pdf | 165-TBGA | 15mm | 13mm | 165 | 3A991.B.2.A | compliant | 8542.32.00.41 | 1 | YES | 3.135V~3.465V | BOTTOM | 3.3V | 1mm | 165 | 3.465V | 3.135V | 2.52.5/3.3V | 0.22mA | Not Qualified | R-PBGA-B165 | 4Mb 128K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | SRAM | Parallel | 128KX36 | 36 | 4718592 bit | 0.085A | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||
| DS28E01P-5A5-A5+2T | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS2433AX+U | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tube | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT42L32M32D1HE-18 IT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | 134-VFBGA | 1.14V~1.3V | 1Gb 32M x 32 | Volatile | 533MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2NP-046 WT ES:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tape & Reel (TR) | 1 (Unlimited) | SDRAM - Mobile LPDDR4 | 200-WFBGA | 1.1V | 200-WFBGA (10x14.5) | 16Gb 512M x 32 | Volatile | 2133MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25QL256ABA8E14-1SIT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25ql256aba1ew70sittr-datasheets-2724.pdf | 24-TBGA | 8mm | 6mm | 24 | 3A991.B.1.A | 8542.32.00.51 | 1 | YES | 2.7V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 1mm | 3.6V | 2.7V | NOT SPECIFIED | R-PBGA-B24 | 256Mb 32M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI | 32MX8 | 8 | 8ms, 2.8ms | 268435456 bit | SERIAL | ||||||||||||||||||||||||||||||||||||||||||||||
| MT29RZ4C4DZZMGMF-18 W.80U TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F4G08ABBDAHC-IT:D | Micron Technology Inc. | $4.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | 85°C | -40°C | FLASH - NAND | ROHS3 Compliant | 2012 | 63-VFBGA | 1.8V | 4 Weeks | 1.95V | 1.7V | 63 | Parallel | 4 Gb | Copper, Silver, Tin | No | 20mA | 1.7V~1.95V | 63-VFBGA | 4Gb 512M x 8 | Non-Volatile | 25 ns | 30b | FLASH | Parallel | 8b | Asynchronous | 2kB | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MT25QL256ABA8E14-1SIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt25ql256aba1ew70sittr-datasheets-2724.pdf | 24-TBGA | 2.7V~3.6V | 256Mb 32M x 8 | Non-Volatile | 133MHz | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29F1T08CUCCBH8-6ITR:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 152-LBGA | 2.7V~3.6V | 1Tb 128G x 8 | Non-Volatile | 167MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECF840AAACN-C1-Y3 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | 1.14V~1.95V | 8Gb 512M x 16 | Volatile | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D768M64D8SQ-053 WT ES:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tape & Reel (TR) | 1 (Unlimited) | SDRAM - Mobile LPDDR4 | 556-VFBGA | 1.1V | 556-VFBGA (12.4x12.4) | 48Gb 768M x 64 | Volatile | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B768M64D8WF-062 WT ES:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tape & Reel (TR) | 1 (Unlimited) | SDRAM - Mobile LPDDR4 | 1.1V | 48Gb 768M x 64 | Volatile | 1600MHz | DRAM |
