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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Thickness | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Memory Size | Memory Type | Frequency (Max) | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Organization | Memory Width | Memory Density | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TC58NVG1S3HBAI6 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-tc58nvg1s3hbai6-datasheets-7457.pdf | BGA | 8mm | 6.5mm | 67 | 67 | Parallel | 1 | YES | BOTTOM | BALL | 3.3V | 0.8mm | 67 | INDUSTRIAL | 3.6V | 2.7V | EEPROM, NAND | 3.3V | 256MX8 | 8 | 2147483648 bit | ||||||||||||||||||||||||||||||||||||||||||||
| 7024L15JG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7024l15jg-datasheets-7452.pdf | PLCC | 29.21mm | 29.21mm | 5V | Lead Free | 7 Weeks | 5.5V | 4.5V | 84 | Parallel | 64 kb | 3.63mm | 2 | No | 260mA | 8kB | RAM, SDR, SRAM | 15 ns | 24b | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||
| CY7C199D-25SXE | Cypress Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 3 (168 Hours) | 125°C | -40°C | CMOS | 2.67mm | RoHS Compliant | SOIC | 5V | Lead Free | 28 | 5.5V | 4.5V | 28 | Parallel | 256 kb | 1 | EAR99 | No | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | 5V | 28 | AUTOMOTIVE | 20 | RAM, SRAM - Asynchronous | 25 ns | 15b | 32KX8 | 8 | 8b | Asynchronous | ||||||||||||||||||||||||||||||||||||||
| 7054S20PRF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7054s20prf-datasheets-7407.pdf | TQFP | 20mm | 14mm | 5V | Contains Lead | 128 | 7 Weeks | 5.5V | 4.5V | 128 | Parallel | 32 kb | no | 1.4mm | 4 | EAR99 | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | No | 1 | 300mA | e0 | Tin/Lead (Sn/Pb) | QUAD | FLAT | 225 | 5V | 0.5mm | 128 | COMMERCIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 12b | 0.0015A | 8b | Asynchronous | COMMON | |||||||||||||||||||||||
| 71V3577S75BQI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | 117MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3577s75bqi-datasheets-7398.pdf | FBGA | 15mm | 13mm | 3.3V | Contains Lead | 11 Weeks | 3.465V | 3.135V | 165 | Parallel | 4.5 Mb | no | 1.2mm | 1 | No | e0 | Tin/Lead (Sn63Pb37) | 225 | 165 | RAM, SRAM | 7.5 ns | 17b | 36b | Synchronous | |||||||||||||||||||||||||||||||||||||||||
| 71V256S10YG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel | 70°C | 0°C | RoHS Compliant | 3.3V | 7 Weeks | 28 | Parallel | 256 kb | 1 | No | RAM, SRAM - Asynchronous | 15b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V3557S85PFG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 91MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3557s85pfg8-datasheets-7385.pdf | TQFP | 20mm | 14mm | 3.3V | Lead Free | 100 | 12 Weeks | 3.465V | 3.135V | 100 | Parallel | 4.5 Mb | yes | 1.4mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 0.65mm | 100 | COMMERCIAL | 30 | SRAMs | 512kB | RAM, SDR, SRAM | 100MHz | 3-STATE | 8.5 ns | 17b | 0.04A | 36b | Synchronous | COMMON | |||||||||||||||||||||||
| 70V06L55PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v06l55pf8-datasheets-7383.pdf | TQFP | 14mm | 14mm | 3.3V | Contains Lead | 64 | 7 Weeks | 3.6V | 3V | 64 | Parallel | 128 kb | no | 1.4mm | 2 | EAR99 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 0.8mm | 64 | COMMERCIAL | 20 | SRAMs | 16kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 28b | 16KX8 | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||
| IDT71T75902S80BGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | SYNCHRONOUS | 2.36mm | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71t75902s80bgi-datasheets-7373.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | NOT SPECIFIED | 2.5V | 1.27mm | 119 | INDUSTRIAL | 2.625V | 2.375V | NOT SPECIFIED | SRAMs | 2.5V | 0.27mA | Not Qualified | RAM, SRAM | 3-STATE | 95MHz | 1MX18 | 18 | 18874368 bit | 0.06A | 8 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||
| 70T3589S133BC | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 133MHz | 1.5mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70t3589s133bc-datasheets-7329.pdf | 17mm | 17mm | 2.5V | Contains Lead | 256 | 7 Weeks | 2.6V | 2.4V | 256 | Parallel | 2.3 Mb | no | 1.4mm | 2 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | 370mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 1mm | 256 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 15 ns | 32b | 64KX36 | 0.015A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||
| 70T3519S166BC8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 166MHz | 1.5mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70t3519s166bc8-datasheets-7328.pdf | 17mm | 17mm | 2.5V | Contains Lead | 256 | 7 Weeks | 2.6V | 2.4V | 256 | Parallel | 9 Mb | no | 1.4mm | 2 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | 450mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 1mm | 256 | COMMERCIAL | 20 | SRAMs | RAM, SRAM | 3-STATE | 12 ns | 36b | 0.015A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||
| IDT71V3556S133BGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | CMOS | 133MHz | SYNCHRONOUS | 2.36mm | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3556s133bgi8-datasheets-7317.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | NOT SPECIFIED | 3.3V | 1.27mm | 119 | INDUSTRIAL | 3.465V | 3.135V | NOT SPECIFIED | SRAMs | 3.3V | 0.31mA | Not Qualified | RAM, SRAM | 3-STATE | 128KX36 | 36 | 4718592 bit | 0.045A | 4.2 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||
| 70V25S35J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 1 (Unlimited) | 70°C | 0°C | CMOS | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v25s35j8-datasheets-7314.pdf | PLCC | 29.21mm | 29.21mm | 3.3V | Contains Lead | 84 | 7 Weeks | 3.6V | 3V | 84 | Parallel | 128 kb | no | 3.63mm | 2 | EAR99 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 180mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 84 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 35 ns | 26b | 8KX16 | 0.005A | 16b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||
| IDT71V2559S75BG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 70°C | 0°C | CMOS | SYNCHRONOUS | 2.36mm | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v2559s75bg8-datasheets-7309.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | NOT SPECIFIED | 3.3V | 1.27mm | 119 | COMMERCIAL | 3.465V | 3.135V | NOT SPECIFIED | SRAMs | 2.53.3V | 0.275mA | Not Qualified | RAM, SRAM | 3-STATE | 100MHz | 256KX18 | 18 | 4718592 bit | 0.04A | 7.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||
| 70V639S12PRF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v639s12prf-datasheets-7292.pdf | TQFP | 20mm | 14mm | 3.3V | Contains Lead | 128 | 7 Weeks | 3.45V | 3.15V | 128 | Parallel | 2.3 Mb | no | 1.4mm | 2 | No | 1 | 465mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 128 | COMMERCIAL | SRAMs | 256kB | RAM, SDR, SRAM | 3-STATE | 12 ns | 34b | 0.015A | 18b | Asynchronous | COMMON | ||||||||||||||||||||||||||
| 709079L15PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 28.5MHz | 1.6mm | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-709079l15pf-datasheets-7280.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 100 | 7 Weeks | 5.5V | 4.5V | 100 | Parallel | 256 kb | no | 1.4mm | 2 | EAR99 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | 285mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | FLAT | 240 | 5V | 0.5mm | 100 | COMMERCIAL | 20 | SRAMs | 5V | RAM, SRAM | 3-STATE | 30 ns | 30b | 0.005A | 8b | Synchronous | COMMON | |||||||||||||||||||||||
| 6116SA20TDB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | CMOS | 5.08mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-6116sa20tdb-datasheets-7243.pdf | CDIP | 32.51mm | 7.62mm | 5V | Contains Lead | 24 | 10 Weeks | 5.5V | 4.5V | 24 | Parallel | 16 kb | no | 3.56mm | 1 | No | 1 | 130mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 5V | 2.54mm | 24 | MILITARY | SRAMs | 5V | MIL-STD-883 Class B | 2kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 20 ns | 11b | 2KX8 | 8b | Asynchronous | COMMON | |||||||||||||||||||||||||
| 709279L9PFG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 70°C | 0°C | CMOS | 40MHz | 1.6mm | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-709279l9pfg-datasheets-7234.pdf | TQFP | 14mm | 14mm | 5V | Lead Free | 100 | 7 Weeks | 5.5V | 4.5V | 100 | Parallel | 512 kb | yes | 1.4mm | 2 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | 350mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 0.5mm | 100 | COMMERCIAL | 30 | SRAMs | 5V | 64kB | RAM, SDR, SRAM | 3-STATE | 9 ns | 30b | 0.005A | 16b | Synchronous | COMMON | ||||||||||||||||||||||
| TH58NVG5S0FTA20 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | CMOS | 1.2mm | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshiba-th58nvg5s0fta20-datasheets-7224.pdf | TFSOP | 18.4mm | 12mm | 3.3V | 48 | 3.6V | 2.7V | 48 | Parallel, Serial | 32 Gb | No | 1 | DUAL | GULL WING | 3.3V | 0.5mm | COMMERCIAL | EEPROM, NAND | 3V | 4GX8 | 8 | 8b | |||||||||||||||||||||||||||||||||||||||||||
| IDT71V25761YSA183BGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | CMOS | 183MHz | SYNCHRONOUS | 2.36mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v25761ysa183bgi8-datasheets-7187.pdf | BGA | 22mm | 14mm | 119 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 3.3V | 1.27mm | 119 | INDUSTRIAL | 3.465V | 3.135V | SRAMs | 2.53.3V | 0.35mA | Not Qualified | RAM, SRAM | 3-STATE | 128KX36 | 36 | 4718592 bit | 0.035A | 3.3 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||
| IDT70824S20G | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 70°C | 0°C | CMOS | ASYNCHRONOUS | 5.207mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt70824s20g-datasheets-7188.pdf | 27.94mm | 27.94mm | 84 | 84 | Parallel | EAR99 | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | NO | PERPENDICULAR | PIN/PEG | NOT SPECIFIED | 5V | 2.54mm | 84 | COMMERCIAL | 5.5V | 4.5V | NOT SPECIFIED | Other Memory ICs | 5V | 0.38mA | Not Qualified | RAM | 4KX16 | 16 | 65536 bit | 15A | 20 ns | ||||||||||||||||||||||||||||||||||
| 71V424L10YGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v424l10ygi8-datasheets-7178.pdf | 23.4mm | 10.2mm | 3.3V | Lead Free | 36 | 12 Weeks | 3.6V | 3V | 36 | Parallel | 4 Mb | yes | 2.2mm | 1 | No | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 36 | INDUSTRIAL | SRAMs | 512kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 10 ns | 19b | 8b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||||||||
| 70V06L55J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v06l55j-datasheets-7171.pdf | PLCC | 24mm | 24mm | 3.3V | Contains Lead | 68 | 7 Weeks | 3.6V | 3V | 68 | Parallel | 128 kb | no | 3.63mm | 2 | EAR99 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 68 | COMMERCIAL | SRAMs | 16kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 28b | 16KX8 | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||
| 70V3399S133PRF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 133MHz | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v3399s133prf8-datasheets-7169.pdf | TQFP | 20mm | 14mm | 3.3V | Contains Lead | 128 | 16 Weeks | 3.45V | 3.15V | 128 | Parallel | 2.3 Mb | no | 1.4mm | 2 | PIPELINED OR FLOW-THROUGH ARCHITECTURE | No | 1 | 400mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 128 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 15 ns | 34b | 0.03A | 18b | Synchronous | COMMON | |||||||||||||||||||||||||
| 71V67603S150BQG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 70°C | 0°C | CMOS | 150MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67603s150bqg8-datasheets-7128.pdf | 15mm | 13mm | 3.3V | Lead Free | 165 | 12 Weeks | 3.465V | 3.135V | 165 | Parallel | 9 Mb | yes | 1.2mm | 1 | PIPELINED ARCHITECTURE | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 3.3V | 165 | COMMERCIAL | 30 | SRAMs | 0.305mA | 1.1MB | RAM, SDR, SRAM | 150MHz | 3-STATE | 3.8 ns | 18b | 256KX36 | 0.05A | COMMON | |||||||||||||||||||||||||||
| 71V67703S75BQGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67703s75bqgi8-datasheets-7117.pdf | 15mm | 13mm | 3.3V | Lead Free | 165 | 7 Weeks | 165 | Parallel | 9 Mb | yes | 1.2mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 3.3V | 165 | INDUSTRIAL | 3.465V | 30 | RAM, SRAM | 18b | 256KX36 | 7.5 ns | |||||||||||||||||||||||||||||||||||
| TC58BVG2S0HBAI4 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/toshiba-tc58bvg2s0hbai4-datasheets-7114.pdf | TFBGA | 11mm | 9mm | 63 | 63 | Parallel | 1 | YES | BOTTOM | BALL | 3.3V | 0.8mm | 63 | INDUSTRIAL | 3.6V | 2.7V | EEPROM, NAND | 3.3V | 512MX8 | 8 | 4294967296 bit | ||||||||||||||||||||||||||||||||||||||||||||
| 71V3557S85PFG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 91MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3557s85pfg-datasheets-7116.pdf | TQFP | 20mm | 14mm | 3.3V | Lead Free | 100 | 12 Weeks | 3.465V | 3.135V | 100 | Parallel | 4.5 Mb | yes | 1.4mm | 1 | FLOW-THROUGH ARCHITECHTURE | No | 1 | 225mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 0.65mm | 100 | COMMERCIAL | 30 | SRAMs | 512kB | RAM, SDR, SRAM | 100MHz | 3-STATE | 8.5 ns | 17b | 0.04A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||
| TC58NVG0S3HTAI0 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1.2mm | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshiba-tc58nvg0s3htai0-datasheets-7112.pdf | TFSOP | 18.4mm | 12mm | 48 | Parallel | 1 | YES | DUAL | GULL WING | 3.3V | 0.5mm | 48 | INDUSTRIAL | 3.6V | 2.7V | R-PDSO-G48 | EEPROM, NAND | 3.3V | 128MX8 | 8 | 1073741824 bit | ||||||||||||||||||||||||||||||||||||||||||||
| 7016S15PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7016s15pf-datasheets-7059.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 80 | 7 Weeks | 5.5V | 4.5V | 80 | Parallel | 144 kb | no | 1.4mm | 2 | EAR99 | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | No | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.65mm | 80 | COMMERCIAL | 20 | SRAMs | 5V | 18kB | RAM, SDR, SRAM | 3-STATE | 15 ns | 28b | 16KX9 | 0.015A | 9b | Asynchronous | COMMON |
