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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Thickness | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Memory Size | Memory Type | Frequency (Max) | Output Characteristics | Access Time | Programming Voltage | Address Bus Width | Organization | Memory Width | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | Data Polling | Toggle Bit | Number of Sectors/Size | Sector Size | Ready/Busy | Page Size | I/O Type | Standby Voltage-Min | Output Enable |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TC58CVG0S3HRAIG | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshiba-tc58cvg0s3hraig-datasheets-5672.pdf | 14 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX68GL1G0FHXFI-11G | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1.4mm | RoHS Compliant | 13mm | 11mm | 64 | Parallel | 1 | YES | BOTTOM | BALL | 260 | 3V | 1mm | INDUSTRIAL | 3.6V | 2.7V | 40 | Flash Memories | 3/3.3V | 0.1mA | Not Qualified | R-PBGA-B64 | FLASH, NOR | 3V | 64MX16 | 16 | 1073741824 bit | 8 | 0.00012A | 110 ns | YES | YES | 1K | 128K | YES | 8/16words | |||||||||||||||||||||||||||||||||||||||||
| 70V7599S200BC | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 70°C | 0°C | CMOS | 200MHz | 1.7mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v7599s200bc-datasheets-5640.pdf | 17mm | 17mm | 3.3V | Contains Lead | 256 | 7 Weeks | 3.45V | 3.15V | 256 | Parallel | 4.5 Mb | no | 1.4mm | 2 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | No | 1 | 950mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 1mm | 256 | COMMERCIAL | SRAMs | 512kB | RAM, SDR, SRAM | 3-STATE | 15 ns | 34b | 0.03A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||
| IDT71P71804S167BQ | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | 167MHz | SYNCHRONOUS | 1.2mm | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p71804s167bq-datasheets-5622.pdf | 15mm | 13mm | 165 | 165 | Parallel | 3A991.B.2.A | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 225 | 1.8V | 1mm | 165 | COMMERCIAL | 1.9V | 1.7V | 20 | SRAMs | 1.5/1.81.8V | 0.475mA | Not Qualified | DDR, RAM, SRAM | 3-STATE | 1MX18 | 18 | 18874368 bit | 0.275A | 0.5 ns | COMMON | 1.7V | ||||||||||||||||||||||||||||||||||||
| IDT71V016SA10Y | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | 3.683mm | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v016sa10y-datasheets-5618.pdf | 28.575mm | 10.16mm | 44 | 44 | Parallel | no | 1 | 3A991.B.2.B | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | DUAL | J BEND | 225 | 3.3V | 1.27mm | 44 | COMMERCIAL | 3.6V | 3.15V | 30 | SRAMs | 3.3V | 0.16mA | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 64KX16 | 16 | 1048576 bit | 0.01A | 10 ns | COMMON | 3.15V | YES | |||||||||||||||||||||||||||||||||||
| 7006L25G | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 70°C | 0°C | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7006l25g-datasheets-5608.pdf | 29.46mm | 29.46mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 68 | Parallel | 128 kb | 3.68mm | 2 | No | 220mA | 16kB | RAM, SDR, SRAM | 25 ns | 28b | 8b | Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71V3579S75PFI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 85°C | -40°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3579s75pfi8-datasheets-5593.pdf | LQFP | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71321SA55J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71321sa55j8-datasheets-5594.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 16 kb | no | 3.63mm | 2 | EAR99 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | No | 1 | 155mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 22b | 0.015A | 8b | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||
| 7132LA100J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7132la100j-datasheets-5581.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 16 kb | no | 3.63mm | 2 | EAR99 | AUTOMATIC POWER-DOWN | No | 1 | 110mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | 20 | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 100 ns | 22b | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||||||||||
| 71V3556SA133BGI | Integrated Device Technology (IDT) | $9.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | 133MHz | 2.36mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3556sa133bgi-datasheets-5577.pdf | BGA | 14mm | 22mm | 3.3V | Contains Lead | 119 | 7 Weeks | 3.465V | 3.135V | 119 | Parallel | 4.5 Mb | no | 2.15mm | 1 | No | 1 | 310mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 119 | INDUSTRIAL | 20 | SRAMs | 512kB | RAM, SDR, SRAM | 133MHz | 3-STATE | 4.2 ns | 17b | 0.045A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||
| IDT71V424S12PHI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | 1.2mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v424s12phi-datasheets-5561.pdf | TSOP | 18.41mm | 10.16mm | 44 | Parallel | no | 3A991.B.2.A | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | DUAL | GULL WING | 240 | 3.3V | 0.8mm | 44 | INDUSTRIAL | 3.6V | 3V | 30 | SRAMs | 3.3V | 0.17mA | Not Qualified | R-PDSO-G44 | RAM, SRAM - Asynchronous | 3-STATE | 512KX8 | 8 | 4194304 bit | 0.02A | 12 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||
| IDT71V016SA10PH | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | Rail/Tube | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v016sa10ph-datasheets-5558.pdf | TSOP | 3.3V | 44 | 3.6V | 3.15V | 44 | Parallel | 1 Mb | no | 1 | 1 | 160mA | e0 | DUAL | GULL WING | 225 | 3.3V | 0.8mm | 44 | COMMERCIAL | 20 | SRAMs | Not Qualified | RAM, SRAM - Asynchronous | 3-STATE | 10 ns | 16b | 16 | 16b | Asynchronous | COMMON | YES | ||||||||||||||||||||||||||||||||||||||||
| 70T633S15BC8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.5mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70t633s15bc8-datasheets-5546.pdf | 17mm | 17mm | 2.5V | Contains Lead | 256 | 7 Weeks | 2.6V | 2.4V | 256 | Parallel | 9 Mb | no | 1.4mm | 2 | No | 1 | 305mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 1mm | 256 | COMMERCIAL | 20 | SRAMs | RAM, SRAM | 3-STATE | 15 ns | 19b | 0.01A | 18b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||
| 71V67703S75PFGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67703s75pfgi8-datasheets-5525.pdf | LQFP | 20mm | 14mm | 3.3V | Lead Free | 100 | 8 Weeks | 100 | Parallel | 9 Mb | yes | 1.4mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | e3 | Matte Tin (Sn) - annealed | YES | QUAD | GULL WING | 260 | 3.3V | 0.65mm | 100 | INDUSTRIAL | 3.465V | 30 | SRAMs | 0.285mA | RAM, SRAM | 3-STATE | 18b | 256KX36 | 0.07A | 7.5 ns | COMMON | |||||||||||||||||||||||||||||||||||
| 7026L15J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7026l15j-datasheets-5515.pdf | PLCC | 29.21mm | 29.21mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 84 | Parallel | 256 kb | no | 3.63mm | 2 | EAR99 | No | 285mA | 84 | 32kB | RAM, SDR, SRAM | 15 ns | 14b | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71V3579S75PFI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 85°C | -40°C | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3579s75pfi-datasheets-5498.pdf | LQFP | Parallel | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT71P71604S250BQG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 70°C | 0°C | 250MHz | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p71604s250bqg8-datasheets-5499.pdf | 165 | Parallel | DDR, RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7006S25GB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | CMOS | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7006s25gb-datasheets-5500.pdf | 29.46mm | 29.46mm | 5V | Contains Lead | 68 | 10 Weeks | 5.5V | 4.5V | 68 | Parallel | 128 kb | no | 3.68mm | 2 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 340mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 5V | 68 | MILITARY | SRAMs | 5V | MIL-PRF-38535 | RAM, SRAM | 3-STATE | 25 ns | 28b | 16KX8 | 0.03A | 8b | Asynchronous | COMMON | |||||||||||||||||||||||||||||||||
| MX68GL1G0FDXFI-12G | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1.4mm | RoHS Compliant | 13mm | 11mm | 64 | Parallel | 1 | YES | BOTTOM | BALL | 260 | 3V | 1mm | INDUSTRIAL | 3.6V | 2.7V | 40 | Flash Memories | 3/3.3V | 0.1mA | Not Qualified | R-PBGA-B64 | FLASH, NOR | 3V | 64MX16 | 16 | 1073741824 bit | 8 | 0.00012A | 120 ns | YES | YES | 1K | 128K | YES | 8/16words | |||||||||||||||||||||||||||||||||||||||||
| TC58NYG2S0HBAI6 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-tc58nyg2s0hbai6-datasheets-5444.pdf | 8mm | 6.5mm | 67 | 16 Weeks | 67 | Parallel | 1 | YES | BOTTOM | BALL | 1.8V | 0.8mm | 67 | INDUSTRIAL | 1.95V | 1.7V | EEPROM, NAND | 1.8V | 512MX8 | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| X28HC256JIZ-12 | Intersil (Renesas Electronics America) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 85°C | -40°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/intersil-x28hc256jiz12-datasheets-5419.pdf | PLCC | 5V | 32 | Parallel | 256 kb | No | 120 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX68GL1G0FDT2I-12G | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1.2mm | RoHS Compliant | TFSOP | 18.4mm | 14mm | 56 | Parallel | 1 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3V | 0.5mm | INDUSTRIAL | 3.6V | 2.7V | 40 | Flash Memories | 3/3.3V | 0.1mA | Not Qualified | R-PDSO-G56 | FLASH, NOR | 3V | 64MX16 | 16 | 1073741824 bit | 8 | 0.00012A | 120 ns | YES | YES | 1K | 128K | YES | 8/16words | |||||||||||||||||||||||||||||||||||||
| IDT71P71604S250BQG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | 250MHz | SYNCHRONOUS | 1.2mm | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71p71604s250bqg-datasheets-5384.pdf | 15mm | 13mm | 165 | 165 | Parallel | 3A991.B.2.A | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | YES | BOTTOM | BALL | 260 | 1.8V | 1mm | 165 | COMMERCIAL | 1.9V | 1.7V | 30 | Not Qualified | DDR, RAM, SRAM | 512KX36 | 36 | 18874368 bit | 0.45 ns | ||||||||||||||||||||||||||||||||||||||||||||
| 7142LA100PDG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 70°C | 0°C | CMOS | ASYNCHRONOUS | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7142la100pdg-datasheets-5328.pdf | DIP | 61.7mm | 15.24mm | Lead Free | 48 | 7 Weeks | 48 | Parallel | yes | 3.8mm | 8542.32.00.41 | 1 | e3 | Matte Tin (Sn) | NO | DUAL | THROUGH-HOLE | 260 | 5V | 48 | COMMERCIAL | 5.5V | 4.5V | NOT SPECIFIED | RAM, SRAM | 2KX8 | 16384 bit | 100 ns | ||||||||||||||||||||||||||||||||||||||||||||
| 70V27S25PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v27s25pf8-datasheets-5288.pdf | TQFP | 14mm | 14mm | 3.3V | Contains Lead | 7 Weeks | 3.6V | 3V | 100 | Parallel | 512 kb | 1.4mm | 2 | No | 245mA | 64kB | RAM, SDR, SRAM | 25 ns | 30b | 16b | Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7143SA55GB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 125°C | -55°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7143sa55gb-datasheets-5285.pdf | 29.46mm | 29.46mm | 5V | Contains Lead | 10 Weeks | 5.5V | 4.5V | 68 | Parallel | 32 kb | 3.68mm | 2 | No | 315mA | RAM, SRAM | 55 ns | 22b | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V631S10PRF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v631s10prf8-datasheets-5276.pdf | TQFP | 20mm | 14mm | 3.3V | Contains Lead | 128 | 7 Weeks | 3.45V | 3.15V | 128 | Parallel | 4.5 Mb | no | 1.4mm | 2 | No | 1 | 500mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 128 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 10 ns | 18b | 0.015A | 18b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||
| IDT71V67602S150BQI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 85°C | -40°C | 150MHz | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v67602s150bqi8-datasheets-5270.pdf | 165 | Parallel | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC58NVG2S0HBAI6 | Toshiba |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 85°C | -40°C | CMOS | ASYNCHRONOUS | 1mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshiba-tc58nvg2s0hbai6-datasheets-5232.pdf | 8mm | 6.5mm | 3.3V | 67 | 3.6V | 2.7V | 67 | Parallel, Serial | 1 | BOTTOM | BALL | 3.3V | 0.8mm | 67 | INDUSTRIAL | EEPROM, NAND | 25 ns | 512MX8 | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V424S10PHGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v424s10phgi8-datasheets-5231.pdf | TSOP | 18.41mm | 10.16mm | 3.3V | Lead Free | 44 | 12 Weeks | 3.6V | 3V | 44 | Parallel | 4 Mb | yes | 1mm | 1 | No | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3.3V | 0.8mm | 44 | INDUSTRIAL | 30 | SRAMs | 512kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 10 ns | 19b | 0.02A | 8b | Asynchronous | COMMON | 3V |
